Browsing by Author "Lu, SS"

Now showing 1 - 5 of 5

A GaInP/GaAs HBT micromixer for 2.4/5.2/5.7-Ghz multiband WLAN applications
(2004-10-05)
Wang, CY
;
Lu, SS
;
Meng, CC
;
Lin, YS
;
電信工程研究所
A GaInP/GaAs HBT micromixer for 2.4/5.2/5.7-GHz multiband WLAN applications is demonstrated. Our experimental results show that the input return loss |S-11| is below -25 dB from DC to 10 GHz with power-conversion gains of 11.7, 11.9, and 11.5 dB at frequencies of 2.4, 5.2, and 5.7 GHz, respectively. The wideband matching characteristic makes the micromixer very suitable for multiband applications. Input P-IdB is -4 dBm and IIP3 is 2.36 dBm. Port-to-port isolation is also quite satisfactory. In addition, the single-to-differential input stage in the Gilbert micromixer eliminates the need for common-mode rejection. (C) 2004 Wiley Periodicals, Inc.
A SiGe micromixer for 2.4/5.2/5.7GHz multiband WLAN applications
(2004-06-05)
Wang, CY
;
Lu, SS
;
Meng, CC
;
Lin, YS
;
電信工程研究所
A SiGe micromixer for 2.4/5.2/5.7-GHz multiband WLAN applications is demonstrated for the first time. Our experimental results show that the input return loss S-11 is below -18 dB from DC to 20 GHz with voltage gains of 32, 26, and 25 dB at frequencies of 2.4, 5.2, and 5.7 GHz, respectively. The wideband matching characteristic makes the micromixer very suitable for multiband applications. Input P-1dB = -14 dBm and IIP3 = -6dBm. Port-to-port isolation is also quite satisfactory. In addition, the single-to-differential input stage in the Gilbert micromixer eliminates the need for common-mode rejection. 2004 Wiley Periodicals, Inc.
DC to 6-Ghz high-gain low-noise GaInP/GaAs HBT direct-coupled amplifiers with and without emitter-capacitive peaking
(2004-10-05)
Meng, CC
;
Wu, TH
;
Lu, SS
;
電信工程研究所
;
Institute of Communications Engineering
High-gain shunt-series shunt-shunt wideband amplifiers with and without emitter-peaking capacitors are demonstrated by using GaInP/GaAs HBT technology. Experimental results show that the power gain is 28 dB front DC to 6 GHz for a wideband amplifier without emitter-peaking capacitors. On the other hand, a wideband amplifier with emitter-peaking capacitors can increase the gain bandwidth up to 8 GHz at the cost of lower input/output return loss. Both circuits have similar power and noise performance. The noise figures of both designs are less than 2.8 dB for frequencies below 6 GHz,. Op(1dB) and OIP3 are 7 and 20 dBin at 2 GHz, respectively. Total current consumption is 67 mA at 5-V supply voltage for both wideband amplifiers. (C) 2004 Wiley Periodicals, Inc.
DC to 8 GHz 11 dB gain Gilbert micromixer using GaInP/GaAs HBT technology
(2003-04-17)
Meng, CC
;
Lu, SS
;
Chiang, MH
;
Chen, HC
;
電信工程研究所
A wideband GaInP/GaAs heterojunction bipolar transistor (HBT) micromixer from DC to 8 GHz with I I dB single-ended conversion gain is demonstrated. The input return loss is better than 10 dB for frequencies up to 9 GHz. The single-to-differential input stage in a Gilbert micromixer renders good wideband frequency response and eliminates the need for common-mode rejection. IP1dB = -17 dBm and IIP3 = -7 dBm are achieved for a small local oscillator power of -2 dBm when LO = 5.35 GHz and PF = 5.7 GHz.
The determination of S-parameters from the poles of voltage-gain transfer function for RF IC design
(2005-01-01)
Lu, SS
;
Lin, YS
;
Chiu, HW
;
Chen, YC
;
Meng, CC
A method for estimating the S-parameters of active circuits using hand analysis is introduced. This method involves the determination of S-parameters from the poles of voltage-gain transfer function. It is found that the information on the frequency responses of input/output return loss, input/output impedance, and reverse isolation is all hidden in the poles or equivalently in the denominator of the voltage-gain transfer function of a circuit system. The method has been applied to three commonly used RF circuit configurations and one fabricated CMOS wide-band amplifier to illustrate the usefulness of the proposed theory.