Browsing by Author "Lu, Ting-Chang"

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AlGaN/GaN multiple quantum wells grown by using atomic layer deposition technique
(2008)
Lo, Ming-Hua
;
Li, Zhen-Yu
;
Chen, Shih-Wei
;
Hong, Jhih-Cang
;
Lu, Ting-Chang
We report the successful growth of high quality ultraviolet (UV) AlGaN/GaN multiple quantum wells (MQWs) structure using atomic layer deposition (ALD) technique. The AlGaN/GaN MQW sample grown on the sapphire substrate consisted of three GaN QWs and four AlGaN barriers comprised AlN/GaN superlattices (SLs). From atomic force microscope measurement, the root-mean-square value of the surface morphology was only 0.35 nm, and no crack was found on the surface. The dislocation density was estimated to be as low as 2x10(8) cm(-2). X-ray and transmission electron microscope data show the grown MQW has shape interface with good periodicity. The sample has a deep UV photoluminescence emission at 334 nm (3.71 eV) with a very narrow linewidth of 45 meV at 13K. The cathodoluminescence image show fairly uniform luminescence pattern at room temperature. In conclusion, the AlGaN/GaN MQW grown by ALD technique should be useful for providing high crystalline quality AlGaN/GaN-based MQW for fabrication of AlGaN/GaN-based UV light emitting devices such as light emitting diodes and lasers.