Browsing by Author "Lu, Xiaomei"

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Anomalous Electronic Anisotropy Triggered by Ferroelastic Coupling in Multiferroic Heterostructures
(2016-02-03)
Ju, Changcheng
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Yang, Jan-Chi
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Luo, Cheng
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Shafer, Padraic
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Liu, Heng-Jui
Conductive tail-to-tail domain walls in epitaxial BiFeO3 films
(2018-08-20)
Jin, Yaming
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Xiao, Shuyu
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Yang, Jan-Chi
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Zhang, Junting
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Lu, Xiaomei
The complex conductive behavior of ferroelectric domain walls is attracting more and more attention for their potential application as an independent nanoelectronic component. For the (001) epitaxial BiFeO3 films, we find that the domain wall conductivity varies among 71 degrees domain walls, with tail-to-tail (T-T) domain walls more conductive than head-to-head (H-H) and head-to-tail (H-T) ones. Furthermore, it is observed that most of the conductive areas are composed of two parallel lines around the T-T domain walls. These experimental results can be well simulated by our theoretical model based on the polarization configuration and a tunneling mechanism. Our work will help to understand the mechanism of domain wall conductance in ferroelectric materials and further promote the usage of domain walls in advanced nano-devices. Published by AIP Publishing.
Dry lubrication of friction on ferroelectric BiFeO3 film
(2018-11-01)
Yang, Chunbin
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Xiao, Shuyu
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Yang, Jan-Chi
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Lu, Xiaomei
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Chu, Ying-Hao
Epitaxial BiFeO3 film shows excellent ferroelectric properties, which is not only studied extensively in magnetoelectric modulation but also shows good tribological performance. In our experiment, we find that the surface of BiFeO3 film can be more lubricant with the application of bias voltages or stress through the AFM probe with a reduction (up to similar to 40%) of the friction between the sample and the probe tip. Based on the Prandtl-Tomlinson model, the mechanism of the dry lubrication on BiFeO3 film originates from the reduction of van der Waals force between sample surface and probe tip. The findings here could be advantageously used in promoting the performance and durability of Micro/Nano Electromechanical devices based on ferroelectric thin films.
Rewritable ferroelectric vortex pairs in BiFeO3
(2017-08-04)
Li, Yang
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Jin, Yaming
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Lu, Xiaomei
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Yang, Jan-Chi
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Chu, Ying-Hao
Ferroelectric vortex in multiferroic materials has been considered as a promising alternative to current memory cells for the merit of high storage density. However, the formation of regular natural ferroelectric vortex is difficult, restricting the achievement of vortex memory device. Here, we demonstrated the creation of ferroelectric vortex-antivortex pairs in BiFeO3 thin films by using local electric field. The evolution of the polar vortex structure is studied by piezoresponse force microscopy at nanoscale. The results reveal that the patterns and stability of vortex structures are sensitive to the poling position. Consecutive writing and erasing processes cause no influence on the original domain configuration. The Z4 proper coloring vortex-antivortex network is then analyzed by graph theory, which verifies the rationality of artificial vortex-antivortex pairs. This study paves a foundation for artificial regulation of vortex, which provides a possible pathway for the design and realization of non-volatile vortex memory devices and logical devices.