Browsing by Author "Lu, YL"

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A novel device structure for low-temperature polysilicon TFTs with controlled grain growth in channel regions
(2000)
Cheng, LJ
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Lu, YL
;
Lin, CW
;
Chang, TK
;
Cheng, HC
In this paper, we demonstrate a novel device structure of low-temperature polysilicon thin-film transistors (LTPS TFTs) for AMLCD applications with using excimer-laser crystallization (ELC). The device structure consists of a thin channel and a thick source/drain. This structure has its merit in the process of ELC and is capable of improving TFTs' electrical characteristics. During excimer laser irradiation, this kind of recessed structure is able to build up localized lateral thermal gradients in the regions near the steps and entice crystallization from the chiller thick source/drain regions toward the hotter thin channels. Because of the development of crystallization process, the average field-effect mobility of the devices can be increased to about 350 cm(2)/V.s, and the on/off current ratios exceed eight orders. In addition to improvement of device performance, the process window of ELC is broadened with the recessed structure.
Automated information. mining on multimedia TV news archives
(2005)
Lai, PS
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Cheng, SS
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Sun, SY
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Huang, TY
;
Su, JM
This paper addresses an integrated information mining techniques for multimedia TV-news archive. The utilizes techniques from the fields of acoustic, image, and video analysis, for information retrieval on news story title, newsman and scene identification. The goal is to construct a compact yet meaningful abstraction of broadcast news video, allowing users to browse through large amounts of data in a non-linear fashion with flexibility and efficiency. By using acoustic analysis, the system can classify video into news versus commercials, with 90% accuracy on a data set of 400 hours TV-news recorded off the air from July 2003 to August of 2004. By applying speaker identification and/or image detection techniques, each news stories can be segmented with an accuracy of 96%. On screen captions or subtitles are recognized by OCR techniques to produce the text title of each news stories. The extracted title words can be used to link or to navigate more related News contents on the WWW. In cooperation with facial and scene analysis and recognition techniques, OCR results can provide users with multimodality query for specific news stories. Some experimental results are presented and discussed for the system reliability and performance evaluation and comparison.
Degradation of passivated and non-passivated N-channel low-temperature polycrystalline silicon TFTs prepared by excimer laser processing
(2002-08-01)
Teng, TH
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Huang, CY
;
Chang, TK
;
Lin, CW
;
Cheng, LJ
The instability mechanisms of passivated and non-passivated low-temperature polycrystalline silicon thin film transistors (LTPS TFTs) under various bias stress conditions have been investigated. Irrespective of plasma treatment, the degradation was more severe under negative gate bias stress than that under positive gate bias stress. This could be due to Fowler-Nordheim tunneling electron induced impact ionization. For hot carrier stress, TFTs with NH3 plasma treatment degraded more severely than those without plasma treatment. This might be attributed to collapsing of weak Si-H bonds in NH3-plasma passivated devices. For the high current stress, it showed the opposite results against hot carrier stress. (C) 2002 Elsevier Science Ltd. All rights reserved.
High-performance low-temperature poly-Si TFTs crystallized by excimer laser irradiation with recessed-channel structure
(2001-06-01)
Lin, CW
;
Cheng, LJ
;
Lu, YL
;
Lee, YS
;
Cheng, HC
High-performance low-temperature poly-Si (LTPS) thin-film transistors (TFTs) have been fabricated by excimer laser crystallization (ELC) with recessed-channel (RC) structure, The TFTs made by this method possessed large longitudinal grains in the channel regions, therefore, they exhibited better electrical char acteristics as compared with the conventional ones. The average field-effect mobility above 300 cm(2)/V-s and on/off current ratio higher than 10(9) were achieved in these RC-structure devices, In addition, since grain growth could be artificially controlled by this method, the device electrical characteristics were less sensitive to laser energy density variation, and therefore the uniformity of device performance could be improved.