Browsing by Author "Lu, Ying-Shin"

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Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
(2013-01-07)
Ho, Szu-Han
;
Chang, Ting-Chang
;
Wu, Chi-Wei
;
Lo, Wen-Hung
;
Chen, Ching-En
This Letter investigates a hump in gate current after negative-bias temperature-instability (NBTI) in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors. Measuring gate current at initial through body floating and source/drain floating shows that hole current flows from source/drain. The fitting of gate current (I-g)-gate voltage (V-g) characteristic curves demonstrates that the Frenkel-Poole mechanism dominates the conduction. Next, by fitting the gate current after NBTI, in the order of Frenkel-Poole then tunneling, the Frenkel-Poole mechanism can be confirmed. These phenomena can be attributed to hole trapping in high-k bulk and the electric field formula Ehigh-k epsilon(high-k) = Q+E-sio2 epsilon(sio2). (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773479]
Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks
(2013-01-07)
Ho, Szu-Han
;
Chang, Ting-Chang
;
Wang, Bin-Wei
;
Lu, Ying-Shin
;
Lo, Wen-Hung
This letter investigates extra traps measured by charge pumping technique in the high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks. N-V-high level characteristic curves with different duty ratios show that the hole discharge time (t(base level)) dominates the value of extra traps. By fitting ln (N (t(base level) = 1 mu s) -N (t(base level))) - Delta t(base level) at different temperatures and computing the equation t = tau(0) exp (alpha(h,SiO2)d(SiO2) + alpha(h,HfO2)d(HfO2,trap)), the results show that these extra traps measured by the charge pumping technique at high voltage zone can be attributed to high-k bulk shallow traps. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773914]