Browsing by Author "Luc, Quang-Ho"

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Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment
(2016-09)
Chang, Po-Chun
;
Luc, Quang-Ho
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Lin, Yueh-Chin
;
Liu, Shih-Chien
;
Lin, Yen-Ku
We report a notable improvement in performance, electron transport, and reliability of HfO2/In0.53Ga0.47As nMOSFETs using a plasma-enhanced atomic layer deposition AlN interfacial passivation layer (IPL) and NH3 postremote plasma treatment (PRPT). The interface state density Dit decreased by approximately one order of magnitude from 6.1x10(12) to 4x10(11) cm(-2)eV(-1), and the border trap density N-bt also declined ten times from 2.8x10(19) to 2.7x10(18) cm(-3), resulting in the reduction of the accumulation frequency dispersion and eliminate the inversion hump in C-V characteristics, and thus improves the device performances. Furthermore, positive bias temperature instability stress indicates that the sample with the AlN IPL and NH3 PRPT is more reliable than the sample without any IPL and plasma treatment. During PBT stress, a smaller threshold voltage shift and less transconductance degradation were observed for the sample with the AlN IPL and NH3 PRPT. In addition, the maximum overdrive voltage for a ten-year operating lifetime increased from 0.19 to 0.41 V.
Impact of Q-Time on the Passivation of Al2O3/p-In0.53Ga0.47As Interfaces Using Various Surface Treatments
(2014)
Luc, Quang-Ho
;
Chang, Edward Yi
;
Trinh, Hai-Dang
;
Wong, Yuen-Yee
;
Do, Huy-Binh
In this article, we demonstrate the influences of atmosphere exposure duration between extrinsic chemical treatment and ALD chamber loading (Q-time) on the passivation effect of the Al2O3/p-In0.53Ga0.47As interfaces. With the use of various chemical solutions and TMA pretreatment, nice capacitance-voltage (C-V) characteristics of Al2O3/p-In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) were obtained with different Q-times before the ALD-Al2O3 deposition. This confirms that Q-time is not the critical issue determining the Al2O3/In0.53Ga0.47As interface quality. X-ray photoelectron spectroscopy (XPS) analyzes in conjunction with the electrical characterizations have implied that the InGaAs native oxides might not play a major role on the interface trap states formation. (C) 2014 The Electrochemical Society. All rights reserved.
Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave Applications by Using Dual-Gate Fabrication
(2017-01-01)
Wang, Huan-Chung
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Su, Huan-Fu
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Luc, Quang-Ho
;
Lee, Ching-Ting
;
Hsu, Heng-Tung
An effective method of improving the linearity of AlGaN/GaN HEMTs by using dual-gate technology is demonstrated. In this letter, we compare the DC characteristics and device linearity of the dual-gate AlGaN/GaN HEMTs with conventional single-gate AlGaN/GaN HEMTs. The correlation between the extrinsic transconductance (Gm) with third-order intermodulation distortion (IM3) and third order intercept point (IP3) suggests that the broader Gm distribution as a function of gate-bias, causes a lower IM3 level and higher IP3 values for the device. The improved device linearity demonstrates that dual-gate AlGaN/GaN HEMT design is a good approach for high-linearity RF device applications. (c) The Author(s) 2017. Published by ECS. All rights reserved.
In-x Ga1-x As Materials for Post CMOS Application: Materials and Device Aspects
(2014)
Chang, Edward Yi
;
Lin, Yueh-Chin
;
Luc, Quang-Ho
;
Trinh, Hai-Dang
;
Yao, Jing-Neng
High mobility InxGa1-xAs material is one of the most promising candidates as channel material for post CMOS device applications. In this presentation, InxGa1-xAs material based MOS capacitors will be studied for possible applications for future III-V MOSFET, TFET and FINFET devices. To improve the gate leakage of the InxGa1-xAs MOSCAP, the combination of wet chemical treatment and in-situ trimethyl aluminum (TMA) pretreatment was found to be the most effective method for InxGa1-xAs surface cleaning to achieve a fully inverted InxGa1-xAs MOSCAP for post CMOS digital applications. In addition, a high-k composite oxide composed of La2O3 and HfO2 is investigated for InxGa1-xAs metal-oxide-semiconductor (MOS) capacitor application. The composite oxide was formed by depositing five layers of La2O3(0.8 nm)/HfO2(0.8 nm) on InxGa1-xAs with post deposition annealing at 500 degrees C. The MOS capacitors fabricated show good inversion behavior, high capacitance, low leakage current, with excellent interface trap density (D-it) of 7.0 x 10(11) cm(-2)eV(-1), small hysteresis of 200 mV and low capacitance equivalent thickness of 2.2 nm at 1 kHz were also achieved.
InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment
(2017-03-01)
Chang, Po-Chun
;
Luc, Quang-Ho
;
Lin, Yueh-Chin
;
Lin, Yen-Ku
;
Wu, Chia-Hsun
In this letter, we report on the impact of a PEALD-AlN interfacial passivation layer (IPL) and an in-situ NH3 post remote-plasma (PRP) treatment onto InGaAs quantum-well MOSFETs with Ti/HfO2/InGaAs gate stack. Transistors with gate lengths down to 80 nm have been fabricated and characterized. Due to the excellent interfacial quality of HfO2/AIN/InGaAs, the subthreshold swing and the peak effective channel mobility have been improved to 93 mV/decade and 4253 cm2/Vs, respectively. The drain current has also shown a 4.6-fold enhancement, to 164mA/mm(I-OFF = 100 nA/mu m DD = 0.5V), compared with the HfO2 control device. The results also show that the HfO2/AIN device exhibits better immunity to short-channel effects (SCEs) than the HfO2 control device. Furthermore, during positive bias temperature instability stress, a smaller V-TH and a lower Gm were observed for the sample with an AIN IPL and NH3 PRP treatment, indicating that it is more reliable than the sample without any IPL or plasma treatment.
STUDY ON THE ELECTRICAL CHARACTERISTICS OF IN SITU PEALD-PASSIVATED HFO2/IN(0.53)GA(0.47)AS MOSCAP AND MOSFET STRUCTURES
(2016)
Luc, Quang-Ho
;
Chang, Po-Chun
;
Do, Huy-Binh
;
Lin, Yueh-Chin
;
Chang, Edward Yi
In situ PEALD processes, including PEALD-A1N pre-gate and post-gate plasma gas treatments, have been studied as a promising passivation method to realize the high interfacial quality of high-k/III-V structures. The formation of excellent dielectric gate stack has been obtained on the HfO2/n, p-In0.53Ga0.47As MOSCAPs by inserting an A1N interfacial layer. The improvements on the electrical properties of HfO2/In0.53Ga0.47As nMOSFET such as maximum drain current, subthreshold swing, off leakage current, and effective electron mobility have been achieved. Utilizing low frequency noise, charge pumping, and bias temperature instability stress technologies, the reliability of the in situ PEALD-passivated HfO2/In0.53Ga0.47As nMOSFET is evaluated.