Browsing by Author "Lumbantoruan, Franky J."

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Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure
(2017-10-01)
Lumbantoruan, Franky J.
;
Wong, Yuen-Yee
;
Huang, Wei-Ching
;
Yu, Hung-Wei
;
Chang, Edward-Yi
NH3 flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes from metal precursors, plays a role in electron compensation for AlGaN/GaN HEMT. No 2-dimensional electron gas (2-DEG) was detected in the AlGaN/GaN structure if grown with 0.5 slm of NH3 due to the presence of higher carbon impurity (2.6 x 10(19) cm(-2)). When the NH3 flow rate increased to 6.0 slm, the carbon impurity reduced to 2.10 x 10(18) atom cm(-3) and the 2 DEG electron density recovered to 9.57 x 10(12) cm(-2).