Browsing by Author "Lumbantoruan, Franky Juanda"

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Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application
(2017-10-16)
Hsiao, Chih Jen
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Kakkerla, Ramesh Kumar
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Chang, Po Chun
;
Lumbantoruan, Franky Juanda
;
Lee, Tsu Ting
In this study, we demonstrate the growth of a 150-nm-thick GaSb layer on a GaAs substrate with excellent film quality using the interfacial misfit dislocation growth mode by the Metal-Organic Chemical Vapor Deposition technique. The n-type GaSb epilayer grown on the GaAs substrate has a low threading dislocation density of 3.2 x 10(6) cm(-2) and a surface roughness of approximately 0.8 nm. A high carrier mobility up to 4600 cm(2) V-1 s(-1) with a carrier concentration of 1.2 x 10(17) cm(-3) is achieved in this study. The fabricated Al2O3/GaSb/GaAs MOSCAP demonstrated excellent capacitance-voltage (C-V) characteristics with a small frequency dispersion of approximately 2.8%/decade. The results demonstrate the potential of high-mobility Sb-based materials on GaAs for p-type channel CMOS applications in the future. Published by AIP Publishing.
High-Performance LPCVD-SiNx/InAlGaN/GaN MIS-HEMTs With 850-V 0.98-m Omega.cm(2) for Power Device Applications
(2018-01-01)
Wang, Huan-Chung
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Lumbantoruan, Franky Juanda
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Hsieh, Ting-En
;
Wu, Chia-Hsun
;
Lin, Yueh-Chin
We demonstrate the electrical performances of the quaternary InAlGaN/GaN MIS-HEMTs with high quality SiNx gate dielectric and surface passivation layer deposited by low pressure chemical vapor deposition (LPCVD) at 780 degrees C. Excellent LPCVD-SiNx/InAlGaN interface and SiNx film quality were obtained, resulting in very high output current density, a very small threshold voltage hysteresis and steep subthreshold slope. The LPCVD-SiNx/InAlGaN/GaN MIS-HEMT device exhibited high on/off current ratio, large gate voltage swing, high breakdown voltage, and very low dynamic on-resistance (R-ON) degradation, meaning effective current collapse suppression compared to the plasma enhanced chemical vapor deposition -SiN x /InAlGaN/GaN MIS-HEMTs. The corresponding specific on-resistance (RoN, sp ) for LPCVD-SiN x device was as low as 0.98 m Omega.cm(2), yielding a high figure of merit of 737 MW/cm(2) . These results demonstrate a great potential of the LPCVD-SiNx /InAlGaN/GaN MIS-HEMTs for high-power switching applications.
High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications
(2018-07-01)
Wu, Chia-Hsun
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Han, Ping-Cheng
;
Liu, Shih-Chien
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Hsieh, Ting-En
;
Lumbantoruan, Franky Juanda
A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for normally-OFF operation. The ferroelectric (FE) polarization increases the number of trapped charges in the HfON charge trapping layer, leading to high positive threshold voltage (V-th) shift for the normally-OFF device. Besides, under the positive bias temperature instability (PBTI) test, the internal electric field induced by FE polarization causes smoother slope of the conduction band in FE gate stack, resulting in better V-th stability. With the proposed hybrid FE charge trap gate stack, the device exhibits a high V-th of +2.71 V at I-DS = 1 mu A/mm, a high maximum current density of 820 mA/mm and low on-resistance (R-ON) of 11.1 Omega . mm. The FE device also shows good V-th-temperature stability compared to the non-FE device results. Besides, a high current device with 40 A is also fabricated in this letter to demonstrate the feasibility of the proposed FEG-HEMT device for high power device application.
InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D
(2018-01-01)
Chang, Po-Chun
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Hsiao, Chih-Jen
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Lumbantoruan, Franky Juanda
;
Wu, Chia-Hsun
;
Lin, Yen-Ku
In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with W-fin down to 20 nm, EOT of 2.1 nm, and L-G = 60 nm shows high I-ON = 188 mu A/mu m at V-DD = 0.5 V and I-OFF = 100 nA/mu m, I-ON/I-OFF = 5 x 10(5), DIBL = 106 mV/V and SS = 96 mV/dec. The device also exhibits a decent extrinsic transconductance (G(m)) of 1142 mu S/mu m at V-DS of 0.5 V. This high performance is attributed to the moderate doping concentration to ensure the channel carriers could be effectively depleted and the low R-SD realized by self-aligned Ni-InGaAs alloy S/D. Furthermore, we also examine the temperature dependence of the main electrical parameters of the JL transistor.
Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell
(2017-12-01)
Simanjuntak, Firman Mangasa
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Singh, Pragya
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Chandrasekaran, Sridhar
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Lumbantoruan, Franky Juanda
;
Yang, Chih-Chieh
An engineering nanorod array in a ZnO-based electrochemical metallization device for nonvolatile memory applications was investigated. A hydrothermally synthesized nanorod layer was inserted into a Cu/ZnO/ITO device structure. Another device was fabricated without nanorods for comparison, and this device demonstrated a diode-like behavior with no switching behavior at a low current compliance (CC). The switching became clear only when the CC was increased to 75 mA. The insertion of a nanorods layer induced switching characteristics at a low operation current and improve the endurance and retention performances. The morphology of the nanorods may control the switching characteristics. A forming-free electrochemical metallization memory device having long switching cycles (> 10(4) cycles) with a sufficient memory window (10(3) times) for data storage application, good switching stability and sufficient retention was successfully fabricated by adjusting the morphology and defect concentration of the inserted nanorod layer. The nanorod layer not only contributed to inducing resistive switching characteristics but also acted as both a switching layer and a cation diffusion control layer.