Browsing by Author "Luo, CY"

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Light-output enhancement in a nitride-based light-emitting diode with 22 degrees undercut sidewalls
(2005-01-01)
Kao, CC
;
Kuo, HC
;
Huang, HW
;
Chu, JT
;
Peng, YC
We successfully fabricated nitride-based light-emitting diodes (LEDs) with similar to 22degrees undercut sidewalls. The similar to 22degrees etching undercut sidewalls were achieved by controllable inductively coupled plasma reactive ion etching. With a 20-mA current injection, the output powers of the LED with similar to 22degrees undercut sidewalls and standard LED were 5.1 and 3 mW, respectively-a factor of 1.7 times enhancement. It was found that such undercut sidewalls could enhance the probability of escaping the photons outside from the LED in the near horizontal and in-plane directions. This simple and controllable method is beneficial to fabricate brighter LEDs.
Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer
(2005-11-01)
Chang, YA
;
Luo, CY
;
Ku, HC
;
Kuo, YK
;
Lin, CF
Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al : In = 5 : 1) indicates that a lower threshold current and higher characteristic temperature (T(0)) value can be obtained when the Al composition is higher than 20%. When Al = 25%, the threshold current is reduced at the expense of a decreased To value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300-370 K. The decreased T(0) value is mainly attributed to the increase in electronic leakage current.