Browsing by Author "Luo, G"

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Suppressing phosphorus diffusion in germanium by carbon incorporation
(2005-11-24)
Luo, G
;
Cheng, CC
;
Huang, CY
;
Hsu, SL
;
Chien, CH
A problem in the Ge MOSFET process is that the phosphor-us for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.