Browsing by Author "Luo, Qing"

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Demonstration of 3D Vertical RRAM with Ultra Low-leakage, High-selectivity and Self-compliance Memory Cells
(2015)
Luo, Qing
;
Xu, Xiaoxin
;
Liu, Hongtao
;
Lv, Hangbing
;
Gong, Tiancheng
Developing high performance self-selective cell (SSC) is one of the most critical issues of the integration of 3D vertical RRAM (V-RRAM). In this work, a four-layer V-RRAM array, with high performance HfO2/mixed ionic and electronic conductor (MIEC) bilayer SSC, was demonstrated for the first time. Several salient features were achieved, including ultra-low half-select leakage (<0.1 pA), very high nonlinearity (>10(3)), low operation current (nA level), self-compliance, high endurance (>10(7)), and robust read/write disturbance immunity.
Fully CMOS Compatible 3D Vertical RRAM with Self-aligned Self-selective Cell Enabling Sub-5nm Scaling
(2016)
Xu, Xiaoxin
;
Luo, Qing
;
Gong, Tiancheng
;
Lv, Hangbing
;
Long, Shibing
In low cost vertical resistive switching memory (VRRAM), the inter-layer leakage becomes a serious problem, primarily resulting from the ultimate scaling in the vertical dimension. In this work, for the first time, we present a novel approach of fabricating 3D VRRAM using self-aligned self-selective RRAM to effectively address such challenge. By successfully suppressing the inter-layer leakage, the scaling limit of VRRAM could be extended beyond 5 nm. Other benefits, such as high nonlinearity (> 10(3)), low power consumption (sub-mu A), robust endurance and excellent disturbance immunity, were also demonstrated.