Browsing by Author "Luo, W. C."

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PD-SOI MOSFET Body-to-Body Leakage Scaling Trend and Optimization
(2008)
Lo, H. C.
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Luo, W. C.
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Lu, W. Y.
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Cheng, C. F.
;
Wu, Benny
Body-to-Body leakage (BBL) in stacked transistor configuration has been characterized by different back gate biases (Vbg), SOI thicknesses, and poly spacings. BBL increases significantly from 65nm to 45nm node mainly due to smaller poly spacing and shallower S/D junctions. By implant optimization and reduction of the SOI thickness, BBL can be reduced below reverse junction leakage level.
The Characteristics and Control of Body-to-Body Leakage Current in PD-SOI
(2009)
Lo, H. C.
;
Luo, W. C.
;
Lu, W. Y.
;
Cheng, C. F.
;
Chen, T. L.
Body-to-body leakage (BBL) current in a partially depleted silicon-on-insulator (PD-SOI) device is increased significantly as polyspacing (PS) is reduced in technology scaling. We found out that the BBL has a great impact to Vt variation. We have demonstrated that the BBL can be minimized drastically by implant optimization. The dependence of the BBL on silicon film thickness, e-SiGe structure, and dopant diffusivity is also discussed in this paper. The layout effect of the BBL current in PD-SOI devices has been characterized with different PSs, device widths, and polylengths. Finally, we have demonstrated that the BBL current can be reduced below junction leakage level. (C) 2009 The Electrochemical Society. [DOI:10.1149/1.3223971] All rights reserved.