Browsing by Author "Luo, Wun-Chen"
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Item type:Item, Enhanced performance and reliability for solid phase crystallized poly-Si TFTs with argon ion implantation(2007) ;Chang, Chia-Wen ;Chang, Che-Lun ;Luo, Wun-Chen ;Lee, Jam-WemLei, Tan-FuPerformance and reliability improvement for polycrystalline silicon thin-film transistors (poly-Si TFrs) with Argon ion implantation are proposed for the first time. By adopting this novel surface -nucleation solid -phase-cry stallization scheme, not only the grain size of poly-Si can be increased but also the intragranular defects can be suppressed effectively. Therefore, a high quality of poly-Si film in channel with better crystallinity is formed. Argon-implanted TFrs have been successfully fabricated and the experimental results demonstrate a superior field-effect mobility of 46. 06 cm(2)/VS, a fewer grain boundary trap density of 3.44 x 10(12) cm(-2) than those of conventional TFrs. The novel proposed structure is a very promising candidate for the future high-performance large-area device applications.