Browsing by Author "Luong Tien Tung"

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Photoluminescence and Raman studies of GaN films grown by MOCVD
(2009)
Luong Tien Tung
;
Lin, K. L.
;
Chang, E. Y.
;
Huang, W. C.
;
Hsiao, Y. L.
The photoluminescence (PL) of high quality GaN epitaxial layer grown by MOCVD was investigated for various excitation power and temperatures from 8.3 to 300K. The PL at 8.3 K and with relatively low excitation power of GaN film grown on c-plane sapphire by using MOCVD shows clearly free-exciton A, B and exciton A bound to neutral donors (D degrees X) at 3.502 eV, 3.509 eV, and 3.496 eV, respectively. The full width at half maximum (FWHM) and binding energy of exciton A of the high quality GaN film were evaluated as small as 3.7 meV and 27.9 +/- 0.5 meV, respectively. In addition, PL and Raman scattering of GaN films grown on r-plane sapphire and (111) Si substrates by using MOCVD were examined. The residual stress effect was detected in all films.