Browsing by Author "Lur, W"

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Effective repair to ultra-low-k dielectric material (k-2.0) by hexamethyidisilazane treatment
(2002-07-01)
Mor, YS
;
Chang, TC
;
Liu, PT
;
Tsai, TM
;
Chen, CW
O-2 plasma ashing is commonly used to remove photoresist. The effect of O-2 plasma ashing on the porous organosilicate glass (CH3SiO1.5)(n), one of the spin-on materials, is investigated. O2 plasma can oxidize the methyl groups in porous organosilicate glass (POSG), which leads to the formation of Si-OH groups. The hydrophilic Si-OH groups will induce moisture uptake so that electrical degradation will occur in POSG film. Pure hexamethyldisilazane (HMDS) vapor (100% HMDS) can react with the Si-OH groups in POSG film. It converts hydrophilic Si-OH groups into hydrophobic Si-O-Si(CH3)(3) groups against moisture uptake. The leakage current density decreases by a factor of 2-3 and the dielectric constant decreases from 3.62 to 2.4 when O-2 plasma-damaged POSG undergoes HMDS treatment at 80degreesC for 15 min. Therefore, HMDS treatment is the effective technique to repair the electrical degradation to POSG film during photoresist stripping processing. (C) 2002 American Vacuum Society.
Effects of a new combination of additives in electroplating solution on the properties of Cu films in ULSI applications
(2000-07-01)
Hu, JC
;
Chang, TC
;
Wu, CW
;
Chen, LJ
;
Hsiung, CS
Effects of a new combination of additives in acid electroplating solution on the properties of Cu thin films have been investigated, The electroplated Cu films exhibit an excellent superfilling behavior. 0.18 mu m vias with an aspect ratio exceeding 5 were filled completely without any void or seam. Strong (111) texture was found for the electroplated Cu films. The resistivity of a 450-nm-thick Cu film was measured to be 1.84 mu Omega cm. (C) 2000 American Vacuum Society. [S0734-2101(00)08004-0].
Low temperature processed poly-Si thin-film transistors with thinner LPD-SiO2 as gate insulator and its reliability
(1995)
Fan, CL
;
Yeh, CF
;
Tsai, HK
;
Lur, W
;
Yen, PW
Shallow-trench isolation with raised-field-oxide structure
(2000-03-01)
Chen, CM
;
Chang, CY
;
Chou, JW
;
Lur, W
;
Sun, SW
This paper describes a novel shallow-trench isolation (STI) structure to suppress the corner metal-oxide semiconductor field-effect transistor (MOSFET) inherent to trench isolation. A gate oxide and a thin polysilicon layer are first processed, and are then followed by the STI process. With this raised-field-oxide structure, the anomalous subthreshold conduction of the shallow-trench isolated MOSFETs due to electric-field crowding at the active edge has been successfully eliminated. No inverse-narrow-width effect is observed as the device width has been scaled down to 0.3 mu m. The raised-field-oxide structure provides a larger process margin for planarization, and good device characteristics were achieved by this novel STI structure.
Trimethylchlorosilane treatment of ultralow dielectric constant material after photoresist removal processing
(2002-10-01)
Chang, TC
;
Mor, YS
;
Liu, PT
;
Tsai, TM
;
Chen, CW
The dielectric properties of organic-porous silica films deteriorate after photoresist removal processing. O-2 plasma ashing has been commonly used to remove photoresist. Nevertheless, the O-2 plasma will destroy the functional groups and induce moisture uptake in porous silica films. In this study, trimethylchlorosilane (TMCS) is used to repair the damage to porous silica caused by the O-2 plasma ashing process. The leakage current and dielectric constant will decrease significantly after the TMCS treatment is applied to damaged porous silica. These experimental results show that the TMCS treatment is a promising technique to repair the damage to porous silica during photoresist removal processing. (C) 2002 The Electrochemical Society.