Browsing by Author "MA, KP"

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LOW-TEMPERATURE FORMATION OF SHALLOW P(+)N JUNCTIONS BY BF2+ IMPLANTATION INTO THIN PD2SI FILMS ON SI SUBSTRATES
(1995-05-01)
LIN, CT
;
MA, KP
;
CHOU, PF
;
CHENG, HC
;
奈米中心
Excellent silicided shallow p(+)n junctions have been successfully achieved by the implantation of BF2+ ions into thin Pd2Si films on Si substrates to a dose of 5 x 10(15) cm(-2) and subsequent low temperature (even at 550 degrees C) furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, the implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm(2) and an ideality factor of about 1.05 can be attained by the implantation of BF2+ ions at 80 keV and subsequent annealing at 550 degrees C. The junction depth is about 0.09 mu m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF2+ ions into a thin Pd2Si layer can stabilize the silicide film and prevent it from forming islands during high temperature annealing.
NOVEL TECHNIQUE TO FORM PT-SILICIDED SHALLOW P(+)N JUNCTIONS USING LOW-TEMPERATURE PROCESSES
(1995-09-01)
MA, KP
;
LIN, CT
;
CHENG, HC
;
奈米中心
;
Nano Facility Center
By implanting BF2+ ions into thin polycrystalline Si films with subsequent low-temperature (as low as 500 degrees C) annealing, excellent Pt-silicided shallow p(+)n junctions have been formed. The samples implanted under the conditions of 100 keV/5 x 10(15) cm(-2) showed a leakage of 7 nA/cm(2) and a junction depth of about 0.05 mu m after 500 degrees C annealing, and the current leakages further decreased to a value at about 2 nA/cm(2) when the annealing temperature was raised to 550 degrees C. Various conditions of implant and annealing were examined to determine and characterize their effects on the resultant junctions.
NOVEL TECHNIQUE TO FORM PT-SILICIDED SHALLOW P(+)N JUNCTIONS USING LOW-TEMPERATURE PROCESSES
(1995-09-01)
MA, KP
;
LIN, CT
;
CHENG, HC
;
奈米中心
;
Nano Facility Center
By implanting BF2+ ions into thin polycrystalline Si films with subsequent low-temperature (as low as 500 degrees C) annealing, excellent Pt-silicided shallow p(+)n junctions have been formed. The samples implanted under the conditions of 100 keV/5 x 10(15) cm(-2) showed a leakage of 7 nA/cm(2) and a junction depth of about 0.05 mu m after 500 degrees C annealing, and the current leakages further decreased to a value at about 2 nA/cm(2) when the annealing temperature was raised to 550 degrees C. Various conditions of implant and annealing were examined to determine and characterize their effects on the resultant junctions.