Browsing by Author "MAA, JJ"

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A NEW CONSTANT-FIELD SCALING THEORY FOR MOSFETS
(1995-07-01)
MAA, JJ
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WU, CY
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電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The constant-field scaling theory (CONFIST) is evaluated in this work, The persistence of the drain-induced barrier lowering characteristics is selected to be essential condition of the CONFIST, Assessment on the accuracy of various constraint equations for MOS device miniaturization is carried out and the application limitations of these equations are studied in detail, The intrinsic incompleteness of the original CONFIST is then revealed by scaling the constraint equation, It is found that the restriction of requiring invariant Poisson equation after scaling in the original CONFIST must be released to prevent the scaling from being limited by the quasi-body effect, The original CONFIST is revised accordingly, and the modified version (CONFIST-2) shows that the application limit of the original CONFIST is about 0.5 mu m and the vertical dimensions must be scaled more than the lateral ones.
A NEW SIMPLIFIED THRESHOLD-VOLTAGE MODEL FOR N-MOSFETS WITH NONUNIFORMLY DOPED SUBSTRATE AND ITS APPLICATION TO MOSFETS MINIATURIZATION
(1995-08-01)
MAA, JJ
;
WU, CY
;
交大名義發表
;
電子工程學系及電子研究所
;
National Chiao Tung University
The formulation, verification, and application of a new simplified 2-D threshold voltage model for n-MOSFET's with nonuniformly doped substrate profile are provided, in which the averaged normal field at the Si/SiO2 interface in the active channel is quoted from a simplified solution of two-dimensional Poisson equation using the Green function technique. Starting with the expression of this average normal field, a simple threshold-voltage model for short-channel n-MOSFET's with nonuniformly doped substrate profile is explicitly expressed in terms of device structures and terminal voltages by considering parabolic source-drain boundary potentials. Moreover, the effects of the junction depth on the threshold voltage are examined in detail. It is shown that the DLBL effect cannot be completely eliminated by simply increasing the substrate doping concentration. Comparisons among developed model, 2-D numerical analysis, and experimental data have been made and the accuracy of the developed analytical model has been verified. In addition, a direct extension of our model to the case of uniformly doped substrates leads to a new constraint equation for device miniaturization.