Browsing by Author "Ma, Chun-Lan"

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Alkanethiol-based single-molecule transistors
(2008-12-01)
Ma, Chun-Lan
;
Nghiem, Diu
;
Chen, Yu-Chang
;
電子物理學系
;
Department of Electrophysics
We have investigated the transport properties of alkanethiol molecules in the two-terminal and three-terminal junctions by using first-principles approaches. We observe that states around the Fermi levels are introduced in the amino-substituted butanethiol junction. It leads to a sharp increase in the current, which is credited to the resonant tunneling. The current-voltage characteristics suggest that the amino-substituted butanethiol molecular junction may be a promising candidate for field-effect transistors.
First principles study of the electron density distribution in a pair of bare metallic electrodes
(2011-07-01)
Ma, Chun-Lan
;
Chen, Yu-Chang
;
Nghiem, Diu
;
Tseng, Allen
;
Huang, Pao-Chieh
Self-consistent calculations of electron density distribution from first principles for a series of semi-infinite metals show that the electron density almost drops to zero at 8.5 a.u. away from a metal surface. The electron densities in a series of bimetallic-electrode systems with a distance between the two electrodes of 21.7 a.u. are further investigated. Spin-polarized calculations of electron density for nonmagnetic and magnetic bimetallic-electrode systems are compared. Our work is helpful for first principles investigation of spin-dependent metal-molecule-metal tunneling junctions.