Browsing by Author "Ma, Jun"

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Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect
(2020-01-01)
Ma, Jun
;
Liu, Chien
;
Liu, Wei-Dong
;
Hung, Yu-Wen
;
Fan, Yu-Chi
In this study, we reported a hybrid multi-PNPN channel junctionless field effect transistor (JLFET) with negative capacitance (NC) effect by simulation. By incorporating a ferroelectric HfAlO capacitor with NC effect, an extremely low subthreshold swing of 34 mVdecade, a very high onoff current ratio and a very low driven voltage were achieved in the NC-enhanced hybrid multi-PNPN channel JLFET. This novel device not only improves the on-state current reduction while channel scaling down, but also shows great potential for the next-generation low-power three-dimensional stacked integrated circuit applications.
Experimental Verification of RF Stress Effect on Cascode Class-E PA Performance and Reliability
(2012-06-01)
Yuan, Jiann-Shiun
;
Yen, Hsuan-Der
;
Chen, Shuyu
;
Wang, Ruey-Lue
;
Huang, Guo-Wei
A cascode class-E power amplifier (PA) operating at 5.2 GHz has been designed using Advanced Design System simulation. RF circuit performances such as output power and power-added efficiency before and after RF stress have been experimentally investigated. The measured output power, power-added efficiency, and linearity after high-input-power RF stress at elevated supply voltage show significant circuit degradations. The impact of hot-carrier injection and gate oxide soft breakdown on cascode class-E PA reliability is discussed.
Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides
(2019-12-01)
Liu, Chien
;
Tung, Yi-Chun
;
Wu, Tian-Li
;
Cheng, Chun-Hu
;
Tseng, Chih-Yang
Herein, the gamma-ray irradiation effect on ferroelectric HfAlO(x)capacitors for biomedical and space applications is investigated. The experimental results focus on the observation of ferroelectric polarization characteristics in support of different defect mechanisms induced by annealing, endurance cycling, and gamma-ray irradiation. It is found that the HfAlO(x)with low Al doping of 6.5% become more vulnerable to radiation exposure, but a remarkable improvement in 9%-Al-doped HfAlO(x)due to less oxygen vacancies is demonstrated. In addition, the results also confirm that the fatigue property of ferroelectric HfAlO(x)capacitor is determined by the electric-stress-induced defect during endurance cycling, not mainly contributed by irradiation damage, which shows the potential for memory applications in rigorous irradiation environment.