Browsing by Author "Mao-Chieh Chen"

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Charge Transfer and Storage in MAOS Structures
(交大學刊編輯委員會, 1975-07)
陳茂傑
;
Mao-Chieh Chen
Metal/Aluminum-oxide/Silicon-oxide/Silicon (MAOS) structures consisted of 900Å thick Al2O3 films deposited by rf reactive sputtering on thermally grown SiO2 layers 70-500Å thick, were made and demonstrated switching and charge storage capabilities using the capacitance-voltage technique. With positive voltage applied to the metal gate, negative charge is easily introduced into the oxide system.The removal of the negtive charge from the system and/or introduction of positive charge into the system can be accomplished by applying negative voltage to the metal. However, the charge transfer in the latter process is not as easily accomplished as those in the former process.The memory retention characteristics of the MAOS structure were also investigated. MAOSFET was fabricated. It demonstrats the threshold voltage can be easily changed.
X頻帶雙飄移高低高矽衝渡二極體之準靜態設計規範
(1976-12)
張懋中
;
陳茂傑
;
Mau-Chung Chang
;
Mao-Chieh Chen
A modified quasi-static model is developed to optimize the power efficiency of double-drift X-band Lo-Hi-Lo IMPATT diodes. We take the ionization rates and scattering-limited velocities for electrons and holes to be not equal at an operation temperature of 150 ℃, and let the carriers' ionization coefficient be in the form α=A*exp(-B/E),where E is the electric field.We maintain the carriers' velocities at saturation and solve for a steady state solution. All these assumptions not only save computer time, but also give us essential physical features.Current tuning effect is concluded as the most important factor in designing the device structure.Large signal values of negative conductance, susceptance,r.f. power generation efficiency are calculated as a function of the oscillation voltage amplitude for a specified bias current density. All of these informations would provide a useful guidance for both device and circuit designers.