Browsing by Author "Meng, CC"

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4.9-GHz low-phase-noise transformer-based superharmonic-coupled GaInP/GaAs HBT QVCO
(2006-06-01)
Meng, CC
;
Chang, YW
;
Tseng, SC
;
資訊工程學系
;
Department of Computer Science
The low-phase-noise GaInP/GaAs heterojunction bipolar transistor (HBT) quadrature voltage controlled-oscillator (QVCO) using transformer-based superharmonic coupling topology is demonstrated for the first time. The fully integrated QVCO at 4.87 GHz has phase noise of -131 dBc/Hz at 1-MHz offset frequency, output power of -4 dBm and the figure of merit (FOM) -198 dBc/Hz. The state-of-the-art phase noise FOM is attributed to the superior GaInP/GaAs HBT low-frequency device noise and the high quality transformer formed on the GaAs semi-insulating substrate.
5.2-GHz GaInP/GaAs HBT cascode LNA with 5.5 dB gain enhancement using inter-stage LC matching
(2006-08-01)
Meng, CC
;
Jhong, JC
;
電信工程研究所
;
Institute of Communications Engineering
A gain boosting method without noise-figure degradation by optimizing interstage matching in a coscode low-noise amplifier (LNA) with emitter-degeneration inductor is demonstrated at 5.2 GHz using 2-mu m GaInP/GaAs HBT technology. A low-pass LC matching network is inserted in the interstage of a conventional cascode LNA with emitter-degeneration-inductor to enhance the gain with the same current consumption. The 2-mu m GaInP/GaAs HBT LNA without interstage matching has 14-dB power gain and 2.37-dB noise figure at 5.2 GHz while the 2-mu m GaInP/GaAs HBT LNA with interstage matching has 19.5-dB power gain and 2.22-dB noise figure at 5.2 GHz. The current consumption is 2.3 mA and voltage supply is 3.6 V. (c) 2006 Wiley Periodicals, Inc.
5.4GHz-127 dBc/Hz at 1MHz GaInP/GaAs HBT quadrature VCO using stacked transformers
(2005-08-04)
Meng, CC
;
Chen, CH
;
Chang, YW
;
Huang, GW
;
電信工程研究所
The first fully integrated GaInP/GaAs heterojunction bipolar transistor (HBT) quadrature voltage controlled oscillator (VCO) using the stacked-transformer LC tank is demonstrated at 5.43-5.31 GHz with low-phase-noise performance. The stacked-transformers are formed by two interconnect metal layers and possess good electrical properties at high frequencies because of the semi-insulating GaAs substrate. The quadrature VCO at 5.38 GHz has phase noise of -127.4 dBc/Hz at 1 MHz offset frequency, output power of -4 dBm and a figure of merit (FOM) -191 dBc/Hz.
A 0.18-mu m CMOS CMFB downconversion micromixer with deep N-well technology for LO-RF and LO-IF isolation improvements
(2005-04-20)
Meng, CC
;
Hsu, SK
;
Wu, TH
;
Huang, GW
;
電信工程研究所
CMOS deep N-well technology can eliminate the physical effects of NMOS transistors and reduce substrate noise and coupling in order to reach the NMOS channel. These properties result in better LO-IF and LO-RF isolations in a Gilbert micromixer. Two identical 0.18-mu m CMOS downconversion micromixers (except at the RF input stage) with deep N-well or without deep N-well are fabricated in adjacent areas of the same wafer for the purpose of isolation comparison. A -37-dB LO-IF and -38-dB LO-RF isolation downconversion micromixer with 19-dB conversion gain and IP1dB = -20 dBm and IIP3 = -13 dBm when RF = 2.4 GHz and LO = 2.25 GHz is demonstrated here using 0.18-mu m-deep N-well CMOS technology. On the other hand, a downconversion micromixer without deep N-well has almost identical power performance but achieves only -20-dB LO-IF isolation and -21-dB LO-RF isolation. (c) 2005 Wiley Periodicals, Inc.
A 1.2-V fully integrated 2.4-GHz low-noise amplifier in 0.35-mu m CMOS technology
(2003-01-20)
Meng, CC
;
Chiang, MH
;
Wu, TH
;
電信工程研究所
;
Institute of Communications Engineering
A 1.2-V fully integrated 0.35-mum inductively degenerated common source CMOS low-noise amplifier has been demonstrated at 2.4 GHz in this paper. A simple common source configuration can be operated at lower voltage and has lower output impedance when compared with a conventional high output impedance cascode LNA circuit topology. The input matching inductance, output matching inductance, and source degeneration inductance are integrated on a single chip. The fully integrated 2.4-GHz CMOS LNA has 5.27-dB power gain, 17-dB input return loss, 15413 output return loss, 4-dB noise figure, and -1-dBm IIPIdB and 8-dBm IIP3 at V-dd = 1.2 V and I-dd = 10 mA, respectively. (C) 2003 Wiley Periodicals, Inc.
A 5.7 GHz Gilbert upconversion mixer with an LC current combiner output using 0.35 mu m SiGe HBT technology
(2005-06-01)
Wu, TH
;
Meng, CC
;
Wu, TH
;
Huang, GW
;
電信工程研究所
This paper demonstrates a small compact 5.7 GHz upconversion Gilbert micromixer using 0.35 mu m SiGe HBT technology. A micromixer has a broadband matched single-ended input port. A passive LC current combiner is used to convert micromixer differential output into a single-ended output and doubles the output current for single-ended-input and single-ended-output applications. Thus, a truly balanced operation of a Gilbert upconversion mixer with a single-ended input and a single-ended output is achieved in this paper. The fully matched upconversion micromixer has conversion gain of -4 dB, OP(1 dB) of -9 dBm and OIP(3) of 4 dBm when input IF=0.3 GHz. LO=5.4 GHz and output RF=5.7 GHz. The IF input return loss is better than IS dB for frequencies up to 20 GHz while RF output return loss is 25 dB at 5.7 GHz. The supply voltage is 3.3 V and the current consumption is 4.6 mA. The die size is 0.9 X 0.9 mm(2) with 3 integrated on-chip inductors.
A fully integrated 5.2 GHz GaInP/GaAs HBT upconversion micromixer with output LC current combiner and oscillator
(2003-01-01)
Meng, CC
;
Hsu, SK
;
Peng, AS
;
Wen, SY
;
Huang, GW
A 5.2 GHz; upconversion micromixer with output LC current combiner and integrated oscillator is demonstrated in 2 mum GaInP/GaAs HBT technology in this paper. Micromixer has a single-ended input and a passive LC current combiner is used to convert mixer differential output into a single-ended output. A cross-coupled LC oscillator with oscillation frequency of 4.3 GHz; and a cascode buffer amplifier are also integrated in the same chip. The die size is 1 mm(2). The fully integrated upconversion micromixer has conversion gain of -2.5 dB, OP1dB of -12.5 dBm and 40 dB RF-IF isolation when input IF=0.9 GHz and thus output RF=5.2 GHz. The IF input return loss is better than 25 dB for frequencies up to 6 GHz: while RF output return loss is better than 12 dB for frequencies from 5.15 GHz; to 5.35 GHz.
A fully integrated 5.2 GHz GaInP/GaAs HBT upconversion micromixer with output LC current combiner and oscillator
(2003)
Meng, CC
;
Hsu, SK
;
Peng, AS
;
Wen, SY
;
Huang, GW
A 5.2 GHz upconversion micromixer with output LC current combiner and integrated oscillator is demonstrated in 2 mum GaInP/GaAs HBT technology in this paper. Micromixer has a single-ended input and a passive LC current combiner is used to convert mixer differential output into a single-ended output. A cross-coupled LC oscillator with oscillation frequency of 4.3 GHz and a cascode buffer amplifier are also integrated in the same chip. The die size is 1 mm(2). The fully integrated upconversion micromixer has conversion gain of -2.5 dB, OP1dB of -12.5 dBm and 40 dB RF-IF isolation when input IF=0.9 GHz and thus output RF=5.2 GHz. The IF input return loss is better than 25 dB for frequencies up to 6 GHz while RF output return loss is better than 12 dB for frequencies from 5.15 GHz to 5.35 GHz.
A fully integrated 5.2 GHz SiGe HBT upconversion micromixer using lumped balun and LC current combiner
(2005)
Wu, TH
;
Meng, CC
;
Wu, TH
;
Huang, GW
;
電信工程研究所
A small and compact 5.2 GHz upconversion Gilbert micromixer using 0.35 mu m SiGe HBT technology is demonstrated in this paper. The upconversion micromixer has a broadband matched single-ended IF input port. A lumped-clement rat-race hybrid is inserted in the LO input stage to maintain LO phase accuracy. A passive LC current Combiner is used to convert the micromixer differential output into a single-ended output and double the output current. Thus, the IF port, LO port and RF port of the upconverter are single-ended, and the stand-along upconverter is suitable for hybrid RF system applications. The fully matched high linearity micromixer has the conversion gain of -1 dB, OpidB of -10 dBm, OIP(3) of 6 dBm when input IF=300 MHz, LO=4.9 GHz and output RF=5.2 GHz. The IF input return loss is better than 10 dB for frequencies up to 20 GHz while the RF output return loss is better than 13.5 dB for frequencies up to 20 GHz. The supply voltage is 3.3 V, the current consumption is 11.5 mA, and the die size is 0.98x0.83 mm(2) with 6 integrated on-chip inductors.
A fully integrated 5.2-GHz single-ended-in and single-ended-out 0.18-mu m CMOS Gilbert upconverter
(2004-11-05)
Meng, CC
;
Lin, MQ
;
Huang, GW
;
電信工程研究所
;
Institute of Communications Engineering
A monolithic 5.2-GHz single-ended-in and single-ended-out Gilbert upconverter with balanced operation is demonstrated using 0.18-mum deep n-well CMOS technology. Thefully matched Gilbert upconverter has conversion gain of - 11.5 dB and OPIdB of - 19 dBm when input IF = 300 MHz, LO = 4.9 GHz, and output RF = 5.2 GHz. The IF input return loss is better than 14 dB for frequencies up to 7 GHz, while RF output return loss is 15 dB at 5.2 GHz. (C) 2004 Wiley Periodicals, Inc.
A GaInP/GaAs HBT micromixer for 2.4/5.2/5.7-Ghz multiband WLAN applications
(2004-10-05)
Wang, CY
;
Lu, SS
;
Meng, CC
;
Lin, YS
;
電信工程研究所
A GaInP/GaAs HBT micromixer for 2.4/5.2/5.7-GHz multiband WLAN applications is demonstrated. Our experimental results show that the input return loss |S-11| is below -25 dB from DC to 10 GHz with power-conversion gains of 11.7, 11.9, and 11.5 dB at frequencies of 2.4, 5.2, and 5.7 GHz, respectively. The wideband matching characteristic makes the micromixer very suitable for multiband applications. Input P-IdB is -4 dBm and IIP3 is 2.36 dBm. Port-to-port isolation is also quite satisfactory. In addition, the single-to-differential input stage in the Gilbert micromixer eliminates the need for common-mode rejection. (C) 2004 Wiley Periodicals, Inc.
A high isolation CMFB downconversion micromixer using 0. 18-urn deep N-well CMOS technology
(2003)
Meng, CC
;
Xu, SK
;
Wu, TH
;
Chao, MH
;
Huang, GW
CMOS deep N-well technology can eliminate body effects of NMOS transistors and improve LO-IF and LO-RF isolation in a Gilbert micromixer. A 37 dB LO-IF and 38 dB LO-RF isolation downconversion micromixer with 19 dB conversion gain, IP1dB=-19.5 dBm and IIP3=-12.5 dBm when RF=2.4 GHz and LO=2.25 GHz is demonstrated in this paper by using 0.18 mum deep N-well CMOS technology. e input return loss and output return loss are better than 15 dB for frequencies up to 6 GHz. On the other hand, a downconversion micromixer without deep n-well has almost identical power performance but achieves only 20 dB LO-IF isolation and 21 dB LO-RF isolation even if two kinds of mixers are fabricated in adjacent areas of the same wafer. The downconversion micromixer used here has intrinsically single-to-differential input stage and active differential PMOS loads to increase IF differential gain while CMFB is used to stabilize bias points. An IF differential amplifier converts differential output into a single-ended output. Finally, an off-chip rat-race coupler provides balanced LO signals to facilitate isolation measurement.
A high isolation CMFB downconversion micromixer using 0.18-mu m deep N-well CMOS technology
(2003)
Meng, CC
;
Xu, SK
;
Wu, TH
;
Chao, MH
;
Huang, GW
CMOS deep N-well technology can eliminate body effects of NMOS transistors and improve LO-IF and LO-RF isolation in a Gilbert micromixer. A 37 dB LO-IF and 38 dB LO-RF isolation downconversion micromixer with 19 dB conversion gain, IP1dB=-19.5 dBm and IIP3=-12.5 dBm when RF=2.4 GHz and LO=2.25 GHz; is demonstrated in this paper by using 0.18 mum deep N-well CMOS technology. The input return loss and output return loss are better than 15 dB for frequencies up to 6 GHz. On the other hand, a downconversion micromixer without deep n-well has almost identical power performance but achieves only 20 dB LO-IF isolation and 21 dB LO-RF isolation even if two kinds of mixers are fabricated in adjacent areas of the same wafer. The downconversion micromixer used here has intrinsically single-to-differential input stage and active differential PMOS loads to increase IF differential gain while CMFB is used to stabilize bias points. An IF differential amplifier converts differential output into a single-ended output. Finally, an off-chip rat-race coupler provides balanced LO signals to facilitate isolation measurement.
A modified HICUM model for GaInP/GaAs HBT devices
(2006-04-01)
Tseng, SC
;
Meng, CC
;
Chen, WY
;
Su, JY
;
電信工程研究所
A compact physics-based transit-time model is established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit-time frequency versus bias (I-C, V-CE), especially at low- and medium-current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit-time frequency versus bias (I-C, V-CE) more precisely. This model has obvious advantages over the VBIC model for showing the relation oj'f, versus bias (I-C, V-CE) in the low and medium current regimes for GaInP/GaAs HBT devices. (c) 2006 Wiley Periodicals, Inc.
A monolithic 5.2-GHz single-ended input and single-ended output GaInP/GaAs HBT upconversion Gilbert mixer with integrated oscillator
(2005-05-20)
Meng, CC
;
Hsu, SK
;
Huang, GW
;
電信工程研究所
;
Institute of Communications Engineering
A truly balanced operation of a 5.2-GHz Gilbert micromixer with a single-ended input and a single-ended output is demonstrated using 2-mu m GaInP/GaAs HBT technology. Because the micromixer has a single-ended input, a passive LC current combiner is used to convert the mixer-differential output into a single-ended output. A cross-coupled LC oscillator with oscillation frequency of 4.3 GHz and a cascode buffer amplifier are also integrated in the same chip. The fully integrated upconversion micromixer has conversion gain of -2.5 dB and OPIdb of - 12.5 dBm when input IF = 0.9 GHz and thus output RF = 5.2 GHz. The IF input return loss is better than 25 dB for frequencies up to 6 GHz, while the RF output return loss is better than 12 dB for frequencies from 5.15 to 5.35 GHz. (c) 2005 Wiley Periodicals, Inc.
A SiGe micromixer for 2.4/5.2/5.7GHz multiband WLAN applications
(2004-06-05)
Wang, CY
;
Lu, SS
;
Meng, CC
;
Lin, YS
;
電信工程研究所
A SiGe micromixer for 2.4/5.2/5.7-GHz multiband WLAN applications is demonstrated for the first time. Our experimental results show that the input return loss S-11 is below -18 dB from DC to 20 GHz with voltage gains of 32, 26, and 25 dB at frequencies of 2.4, 5.2, and 5.7 GHz, respectively. The wideband matching characteristic makes the micromixer very suitable for multiband applications. Input P-1dB = -14 dBm and IIP3 = -6dBm. Port-to-port isolation is also quite satisfactory. In addition, the single-to-differential input stage in the Gilbert micromixer eliminates the need for common-mode rejection. 2004 Wiley Periodicals, Inc.
A watt-level 2.3-GHz GaAs MESFET power amplifier with gap-coupled microstrip-line matching topology
(2004-06-05)
Meng, CC
;
Wang, W
;
電信工程研究所
;
Institute of Communications Engineering
A one-stage hybrid power amplifier integrated with gap-coupled microstrip lines for impedance matching is demonstrated in this work. The gap-coupled microstrip line amplifier module realized here can provide IS-dB power gain, 33.5-dBm output power, and 42% power-added efficiency (PAE) at 2.3 GHZ. The demonstrated topology is suitable in monolithic 1C technology, especially in the millimeter-wave frequency because the gap-coupled microstrip lines can he easily compacted into small size. 2004 Wiley Periodicals, Inc.
Analysis of DC characteristics and small signal equivalent circuit parameters of GaAs metal-semiconductor field effect transistors with different gate lengths and different gate contours by two-dimensional device simulations
(2005-09-01)
Meng, CC
;
Su, JY
;
Yang, SM
;
電信工程研究所
;
Institute of Communications Engineering
The gate length and gate contour of a GaAs metal-semiconductor field effect transistor (MESFET) device play important roles in determining the small signal circuit parameters and large signal breakdown voltage behavior, GaAs MESFETs with different gate lengths and gate contours were studied by the two-dimensional (2-D) semiconductor device simulations to investigate the dependence of small signal circuit parameters and breakdown voltage on gate length and gate contour. The results show that gate length affects small-signal circuit parameter C(gs) while gate contour affects C(gd). The breakdown voltage has strong dependence on gate contour and little dependence on gage length.
Compact 5.2-GHz GaInP/GaAs HBT gilbert upconverter using lumped rat-race hybrid and current combiner
(2005-10-01)
Meng, CC
;
Wu, TH
;
Lin, MC
;
電信工程研究所
;
Institute of Communications Engineering
A compact 5.2-GHz Gibert upconversion mixer is demonstrated using the 2-mu m GaInP/GaAs heterojunction bipolar transistor (HBT) technology. A miniature lumped-element rat-race hybrid and an LC current combiner are used in the LO port and the RF port of the upconversion Gilbert mixer, respectively. The effect of the LC current combiner with inductor loss is established in this letter. An active IF balun is incorporated in. the Gilbert upconverter with no extra power consumption. The fully integrated Gilbert upconverter has conversion gain of 1 dB, OP (1 dB) of -10 dBm, and OIP3 of 2 dBm when input IF = 300 MHz, LO = 4.9 GHz, and output RF = 5.2 GHz.
DC to 6-Ghz high-gain low-noise GaInP/GaAs HBT direct-coupled amplifiers with and without emitter-capacitive peaking
(2004-10-05)
Meng, CC
;
Wu, TH
;
Lu, SS
;
電信工程研究所
;
Institute of Communications Engineering
High-gain shunt-series shunt-shunt wideband amplifiers with and without emitter-peaking capacitors are demonstrated by using GaInP/GaAs HBT technology. Experimental results show that the power gain is 28 dB front DC to 6 GHz for a wideband amplifier without emitter-peaking capacitors. On the other hand, a wideband amplifier with emitter-peaking capacitors can increase the gain bandwidth up to 8 GHz at the cost of lower input/output return loss. Both circuits have similar power and noise performance. The noise figures of both designs are less than 2.8 dB for frequencies below 6 GHz,. Op(1dB) and OIP3 are 7 and 20 dBin at 2 GHz, respectively. Total current consumption is 67 mA at 5-V supply voltage for both wideband amplifiers. (C) 2004 Wiley Periodicals, Inc.