Browsing by Author "Meng, Ting"

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Stability of Amorphous Indium-Tungsten Oxide Thin-Film Transistors Under Various Wavelength Light Illumination
(2016-04)
Yang, Zhao
;
Meng, Ting
;
Zhang, Qun
;
Shieh, Han-Ping D.
;
光電工程學系
Amorphous indium-tungsten oxide (a-IWO) thin-film transistors (TFTs) were prepared by the RF-sputtering method, and their electrical stability under various conditions of wavelength light illumination was investigated. It was found that the electrical stability of the devices was dependent on the light wavelength and the illumination time. The analysis reveals that the improvement of the light illumination stability of the a-IWO-TFTs is ascribed to the oxygen vacancies transition between V-O-V-O(+) and V-O-V-O(2+) under different wavelength illuminations.
Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions
(2017-02-01)
Qu, Mingyue
;
Chang, Chih-Hsiang
;
Meng, Ting
;
Zhang, Qun
;
Liu, Po-Tsun
Amorphous tungsten-doped indium oxide thin-film transistors (a-IWO-TFTs) are prepared by RF sputtering and annealed in air, O-2, and N-2 ambients. The influence of annealing ambient on the electrical characteristics and stability of the a-IWO-TFTs is investigated. It is found that the characteristics and stability are improved in O-2 and N-2 ambients, which can be explained by the reduction of structural defects and oxygen vacancies. When annealed in O-2, the TFT device with saturation mobility of 27.55cm(2)V(-1)s(-1), threshold voltage of 0.5V and drain current on-off ratio of 10(8) is obtained. After an applied V-GS of 25 and -25V for 2000s in darkness, the values of Delta V-th are 4.5 and -0.92V, respectively.