Browsing by Author "Meng Hsin-Fei"

Now showing 1 - 18 of 18

BIOCHEMICAL SENSOR AND METHOD OF MANUFACTURING THE SAME
(2012-09-06)
ZAN Hsiao-Wen
;
Tsai Chuang-Chuang
;
Meng Hsin-Fei
;
Yeh Chun-Cheng
;
Dai Ming-Zhi
A biochemical sensor and a method of manufacturing the same are disclosed. The biochemical sensor includes a substrate, a gate arranged on one side of the substrate, a gate insulating layer arranged on one side of the gate opposite to the substrate, an active layer arranged on one side of the gate insulating layer opposite to the gate, a source and a drain arranged on one side of the active layer opposite to the gate insulating layer, and a biochemical sensing layer arranged on one side of the active layer opposite to the gate insulating layer and between the source and the drain.
Label-free sensor
(2012-07-10)
Meng Hsin-Fei
;
Hong Sheng-Fu
;
Chao Yu-Chiang
;
Liu Chien-Cheng
;
Liu Wen-Hsing
The invention provides a label-free sensor that includes a substrate, a first electrode formed on the substrate, a second electrode formed on the substrate and spaced away from the first electrode, and a semiconductor layer formed on the substrate and being in contact with the first electrode and the second electrode. The semiconductor layer has a plurality of probe groups bonded to the semiconductor layer by functionalization, for sensing a coupling-specific substance having bonding specificity with the probe groups. The semiconductor layer is bonded with the probe groups, and the detection of detected object is performed in an instant, quick, rapid, and sensitive manner by measuring variation in electric current, avoiding the use of fluorescent reading equipment for reading fluorescent signals.
Manufacturing multilayer conjugate polymer optoelectronics device by using buffer layer
(2011-09-13)
Meng Hsin-Fei
;
Horng Sheng-Fu
;
Hsu Chain-Shu
;
Lin Shi-Cheng
;
Liao Hua-Hsien
A highly stable, multilayer organic molecular photoelectric element without interlayer miscibility phenomenon during manufacturing process, and a method for producing multilayer organic molecular photoelectric elements with simplified solution process are disclosed.
Method for forming vertical type sensor
(2014-11-04)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Dai Ming-Zhi
;
Chao Yu-Chiang
The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.
METHOD FOR FORMING VERTICAL TYPE SENSOR
(2014-07-31)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Dai Ming-Zhi
;
Chao Yu-Chiang
The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.
Method for manufacturing organic electronic component having salt compound
(2014-05-13)
Meng Hsin-Fei
;
Lin Hao-Wu
;
Horng Sheng-Fu
;
Zan Hsiao-Wen
;
Chang Hao-Wen
A method for manufacturing an organic electronic component is provided. The method includes steps of providing a substrate and an organic material; coating the organic material onto the substrate; heating the substrate to form a first carrier transport layer; doping a material having a metal ion to an organic solvent to form an organic solution; and applying the organic solution onto the first carrier transport layer to form a second carrier transport layer.
Method for preparing organic light emitting diode and device thereof
(2011-06-30)
Hsu Chain-Shu
;
Meng Hsin-Fei
;
Horng Sheng-Fu
;
Zan Hsiao-Wen
;
Tseng Hsin-Rong
A method for fabricating an organic light emitting diode and a device thereof are provided. The method includes: providing a substrate; dispensing to the substrate a second organic molecule solution resulting from dissolving a second organic molecule in a solvent; applying the second organic molecule solution to a surface of the substrate so as to form a wet film layer; and heating the wet film layer by a heating unit to remove the solvent therefrom and thereby form a second organic molecule film. The method is effective in fabricating a uniform multilayer structure for use in fabrication of large-area photoelectric components.
Nanoball solution coating method and applications thereof
(2014-06-10)
Meng Hsin-Fei
;
Zan Hsiao-Wen
;
Chao Yen-Chu
;
Wang Kai-Ruei
;
Hsu Yung-Hsuan
The present invention discloses a nanoball solution coating method and applications thereof. The method comprises steps: using a scraper to coat a nanoball solution on a substrate to attach a plurality of nanoballs on the substrate; flushing or flowing through the substrate with a heated volatile solution to suspend the nanoballs unattached to the substrate in the volatile solution; and using the scraper to scrape off the volatile solution carrying the suspended nanoballs, whereby is simplified the process to coat nanoballs. The method can be used to fabricate nanoporous films, organic vertical transistors, and large-area elements and favors mass production.
ORGANIC LIGHT-EMITTING MATERIAL, ORGANIC LIGHT-EMITTING ELEMENT USING THE SAME AND METHOD OF FORMING THE SAME
(2013-05-30)
Meng Hsin-Fei
;
Horng Sheng-Fu
;
Tseng Hsin-Rong
;
Yu Chia-Da
;
Yeh Chuang-Ling
The present invention provides compound of formula (I)wherein each substituent is defined in the specification. The compound may be used, in combination with other organic light-emitting materials, in a light-emitting layer of an organic light-emitting element. The present invention also provides an organic light-emitting element including a first electrode, a second electrode and at least three layers of organic material layers disposed between the first electrode and the second electrode, wherein the layer used as a light-emitting layer contains a compound of formula (I). Further, an all-solution process, which is used for fabricating the organic light-emitting element of the present invention, has the advantages such as avoiding miscibility among the layers to fabricate an element with a large surface area and lower production cost.
Organic photosensitive optoelectronic device
(2011-06-28)
Meng Hsin-Fei
;
Hong Sheng-Fu
;
Tseng Hsin-Rong
;
Chen En-Chen
;
Chu Chia-Hung
An organic photosensitive optoelectronic device includes an anode, an organic photosensitive layer formed on the anode and having a donor portion and an acceptor portion, a hole blocking layer formed on the organic photosensitive layer so as for the organic photosensitive layer to be sandwiched between the anode and the hole blocking layer, and a cathode formed on the hole blocking layer so as for the hole blocking layer to be sandwiched between the cathode and the organic photosensitive layer. The highest occupied molecular orbitals (HOMO) of the hole blocking layer is at least 0.3 eV higher than that of the donor portion. Therefore, the optoelectronic device efficiently suppresses dark current so as to enhance sensitivity when applied to a detector.
Organic-semiconductor-based infrared receiving device
(2011-07-05)
Meng Hsin-Fei
;
Horng Sheng-Fu
;
Yang Chia-Ming
An organic-semiconductor-based infrared receiving device comprises an electrode layer having a positive layer and a negative layer to form an electric field, and a transport layer located between the positive and negative layers and having a first and a second predetermined material combined in a predetermined ratio. The energy of infrared light from a light source is received at an interface between the first and second materials. The thickness of the transport layer can be increased to enhance the light absorbance in the infrared light range to form electron-hole pairs, which are then parted to form a plurality of electrons and holes driven by the electric field to move to the negative layer and the positive layer, respectively, so that a predetermined photocurrent is generated.
SOLAR CELL AND FABRICATION METHOD THEREOF
(2012-12-27)
Meng Hsin-Fei
;
Zan Hsiao-Wen
;
Horng Sheng-Fu
;
Chao Yu-Chiang
;
Lin Yuan-Pai
A solar cell is provided that an extremely thin light absorber is formed between a n-type semiconductor layer and a p-type semiconductor layer such that the light absorber is used to absorb solar energy, while the p-type semiconductor layer may not absorb light. After separation of electrons and holes, the carriers will not recombine during the conduction, in order to avoid energy loss.
Vertical electro-optical component and method of fabricating the same
(2014-05-13)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Tsai Wu-Wei
;
Chao Yu-Chiang
A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.
VERTICAL ELECTRO-OPTICAL COMPONENT AND METHOD OF FABRICATING THE SAME
(2012-09-20)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Tsai Wu-Wei
;
Chao Yu-Chiang
A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.
VERTICAL ELECTRO-OPTICAL COMPONENT AND METHOD OF FABRICATING THE SAME
(2014-07-31)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Tsai Wu-Wei
;
Chao Yu-Chiang
A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.
VERTICAL TRANSISTOR AND A METHOD OF FABRICATING THE SAME
(2011-11-24)
Meng Hsin-Fei
;
Zan Hsiao-Wen
;
Chao Yu-Chiang
A vertical transistor and a method of fabricating the vertical transistor are provided. The vertical transistor has a substrate, a first electrode formed on the substrate, a first insulation layer formed on the first electrode, with a portion of the first electrode exposed from the first insulation layer and having a thickness greater than 50 nm and no more than 300 nm, a grid electrode formed on the first insulation layer, a semiconductor layer formed on the first electrode, and a second electrode formed on the semiconductor layer.
Vertical type sensor
(2014-05-13)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Dai Ming-Zhi
;
Chao Yu-Chiang
The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.
VERTICAL TYPE SENSOR
(2012-04-12)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Dai Ming-Zhi
;
Chao Yu-Chiang
The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.