Browsing by Author "Mercha, Abdelkarim"

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45-nm Planar Bulk-CMOS 23-GHz LNAs With High-Q Above-IC Inductors
(2010)
Wang, Wen-Chieh
;
Huang, Zue-Der
;
Carchon, Geert
;
Mercha, Abdelkarim
;
Decoutere, Stefaan
Two 23 GHz low-noise amplifier (LNA) have been designed and implemented by 45 nm planar bulk-CMOS technology with high-Q above-IC inductors. In the designed LNAs, the structure of cascode amplifier with source inductive degeneration is used. All high-Q above-IC inductors have been implemented by thin-film wafer-level packaging (WLP) technology. The fabricated one-stage LNA has a good linearity where the input 1 dB compression point (IP(-1dB)) is -9.5 dBm and the input referred third-order intercept point (P(IIP3)) is +2.25 dBm. It is operated with a 1 V power supply drawing a current of only 3.6 mA. The fabricated one-stage LNA has demonstrated a 4 dB noise figure (NF) and a 7.1 dB gain at the peak gain frequency of 23 GHz. Moreover, the fabricated two-stage LNA has the IP(-1dB) of -16 dBm and the P(IIP3) of -4.2 dBm. It drains 9.3 mA from 1-V power supply. This two-stage LNA has demonstrated a 4.4 dB NF and a 11.6 dB gain at the peak gain frequency of 23.4 GHz. The fabricated one-stage LNA has the highest figure-of-merit (FOM). The experimental results have proved the suitability of 45 nm gate length planar bulk-CMOS devices for RF ICs above 20 GHz.
A 1 V 23 GHz Low-Noise Amplifier in 45 nm Planar Bulk-CMOS Technology With High-Q Above-IC Inductors
(2009-05-01)
Wang, Wen-Chieh
;
Huang, Zue-Der
;
Carchon, Geert
;
Mercha, Abdelkarim
;
Decoutere, Stefaan
A 23 GHz electrostatic discharge-protected low-noise amplifier (LNA) has been designed and implemented by 45 nm planar bulk-CMOS technology with high-Q above-IC inductors. In the designed LNA, the structure of a one-stage cascode amplifier with source inductive degeneration is used. All high-Q above-IC inductors have been implemented by thin-film wafer-level packaging technology. The fabricated LNA has a good linearity where the input I dB compression point (IP(-1) (dB))is - 9.5 dBm and the input referred third-order intercept point (P(IIP3)) is +2.25 dBm. It is-operated with a I V power supply drawing a current of only 3.6 mA. The fabricated LNA has demonstrated a 4 dB noise figure and a 7.1 dB gain at the peak gain frequency of 23 GHz, and it has the highest figure-of-merit. The experimental results have proved the suitability of 45 nm gate length bulk-CMOS devices for PF ICs above 20 GHz.