Browsing by Author "Mizubayashi, Wataru"

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Atomic layer defect-free etching for germanium using HBr neutral beam
(2019-09-01)
Fujii, Takuya
;
Ohori, Daisuke
;
Noda, Shuichi
;
Tanimoto, Yosuke
;
Sato, Daisuke
The authors developed extremely selective etching for making an atomically flat, defect-free germanium fin (Ge Fin) structure. The etching uses a hydrogen bromide (HBr) neutral beam (NB), and they investigated the etching reaction differences between the HBr NB and a Cl-2 NB. No sidewall etching by HBr NB occurred at 90 degrees C, although that by Cl-2 NB occurred at more than 90 degrees C. This was due to the different boiling points of GeBr4 and GeCl4 as the reacted layer was formed by NB irradiation on the Ge surface. As a result, the Ge sidewall etching by Cl-2 NB occurred above 90 degrees C, whereas that by HBr NB did not occur at 90 degrees C. Additionally, nonvolatile bromide protected layers, such as GeBr4 and SiBrxOy, were deposited on the Ge sidewall and the SiO2 top surface in case of using HBr, respectively. Then, the authors succeeded in fabricating the atomically flat, defect-free Ge Fin structure with the extremely selective HBr NB etching. This result shows that HBr NB can more precisely achieve sub-10-nm scale atomic layer Ge etching for 3D Fin-type MOSFETs.
Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beam
(2019-03-01)
Ohori, Daisuke
;
Fujii, Takuya
;
Noda, Shuichi
;
Mizubayashi, Wataru
;
Endo, Kazuhiko
In case of using pure chlorine chemistry, Ge etching reactivity is three times higher than Si etching reactivity because of the larger lattice spacing in Ge. As a result, during the chlorine plasma etching of a Ge Fin structure, there are serious problems such as a large side-etching and large surface roughness on the Ge sidewall. Conversely, the authors found that several-ten nanometer-width Ge Fin structures with defect-free, vertical, and smooth sidewalls were successively delineated by chlorine neutral beam etching. Based on these results, the problems caused by chlorine plasma etching are considered to be due to the enhancement of chemical reactivity caused by defect on the sidewall with the irradiation of ultraviolet/vacuum ultra violet (UV/VUV) photons. Namely, it is clarified that the neutral beam etching could achieve real atomic layer etching by controlling the defect without any UV/VUV photons on the sidewall surface for future nanoscale Ge Fin structures. Published by the AVS.
Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors
(2017-02-01)
Mizubayashi, Wataru
;
Noda, Shuichi
;
Ishikawa, Yuki
;
Nishi, Takashi
;
Kikuchi, Akio
We investigated the impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and the device performance of Ge fin field-effect transistors (Ge FinFETs). UV light irradiation during etching affected the shape of the Ge fin and the surface roughness of the Ge fin sidewall. A vertical and smooth Ge fin could be fabricated by neutral beam etching without UV light irradiation. The performances of Ge FinFETs fabricated by neutral beam etching were markedly improved as compared to those of Ge FinFETs fabricated by inductively coupled plasma etching, in which the UV light has an impact. (C) 2017 The Japan Society of Applied Physics