Browsing by Author "Mo, Yan"

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Time-dependent density functional theory for quantum transport
(2010-09-21)
Zheng, Xiao
;
Chen, GuanHua
;
Mo, Yan
;
Koo, SiuKong
;
Tian, Heng
Based on our earlier works [X. Zheng , Phys. Rev. B 75, 195127 (2007); J. S. Jin , J. Chem. Phys. 128, 234703 (2008)], we propose a rigorous and numerically convenient approach to simulate time-dependent quantum transport from first-principles. The proposed approach combines time-dependent density functional theory with quantum dissipation theory, and results in a useful tool for studying transient dynamics of electronic systems. Within the proposed exact theoretical framework, we construct a number of practical schemes for simulating realistic systems such as nanoscopic electronic devices. Computational cost of each scheme is analyzed, with the expected level of accuracy discussed. As a demonstration, a simulation based on the adiabatic wide-band limit approximation scheme is carried out to characterize the transient current response of a carbon nanotube based electronic device under time-dependent external voltages. (c) 2010 American Institute of Physics. [doi:10.1063/1.3475566]
Time-dependent density functional theory for quantum transport
(2010-09-21)
Zheng, Xiao
;
Chen, GuanHua
;
Mo, Yan
;
Koo, SiuKong
;
Tian, Heng
Based on our earlier works [X. Zheng , Phys. Rev. B 75, 195127 (2007); J. S. Jin , J. Chem. Phys. 128, 234703 (2008)], we propose a rigorous and numerically convenient approach to simulate time-dependent quantum transport from first-principles. The proposed approach combines time-dependent density functional theory with quantum dissipation theory, and results in a useful tool for studying transient dynamics of electronic systems. Within the proposed exact theoretical framework, we construct a number of practical schemes for simulating realistic systems such as nanoscopic electronic devices. Computational cost of each scheme is analyzed, with the expected level of accuracy discussed. As a demonstration, a simulation based on the adiabatic wide-band limit approximation scheme is carried out to characterize the transient current response of a carbon nanotube based electronic device under time-dependent external voltages. (c) 2010 American Institute of Physics. [doi:10.1063/1.3475566]