Browsing by Author "NING, SL"

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ELECTROLUMINESCENCE OF A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH QUANTUM-WELL-INJECTION STRUCTURES
(1994-09-01)
JEN, TS
;
SHIN, NF
;
TSAY, WC
;
CHEN, JY
;
NING, SL
In order to improve the electroluminescence (EL) characteristics of hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diodes (TFLEDs), the quantum-well-injection (QWI) structures have been incorporated into their intrinsic (i-) layer. Two types of TFLED were fabricated to study the effect of the incorporated QWI structures on their EL characteristics: the device I contains a step-gap QWI structure of barrier (15 angstrom)/well (45 angstrom)/barrier (15 angstrom) inserted at both the p-i and i-n interfaces, and the device Il has only one graded-gap QWI structure of barrier (10 angstrom)/well (10 angstrom)/barrier (10 angstrom) inserted at the p-i interface. The obtained brightness of device I was about 10 cd/m2 at an injection current density of 1 A/cm2. The emission light of device I was yellow-like as detected by human eyes. Whereas, for device II, the brightness was about 256 cd/m2 at 800 mA/cm2 and an orange light emission was observed.
GRADED-GAP A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES
(1992-07-01)
HONG, JW
;
SHIN, NF
;
JEN, TS
;
NING, SL
;
CHANG, CY
In order to improve the performance of hydrogenated amorphous-silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diodes (TFLED's), a p-i-n TFLED with a graded p-i junction has been proposed and fabricated. The electroluminescence (EL) intensity of the proposed TFLED was more than 100 times higher than that of the basic p-i-n TFLED and about 35 times lower than that of the conventional green LED, at the same injection current density. This significant improvement was attributed to the better interface property and enhancement of hole injection efficiency by using the graded-gap p-i junction.