Browsing by Author "Nakajima, M"

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Terahertz field detection beyond 30 THz by proton-bombarded InP photoconductive antennas
(2005)
Liu, TA
;
Tani, M
;
Nakajima, M
;
Hangyo, M
;
Sakai, K
We show that photoconductive antennas fabricated on proton-bombarded InP (InP:H+) substrates with a proton dosage of 1x10(15) ions/cm(2) are promising for THz detection.
Ultrabroadband terahertz field detection by photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs
(2003-08-18)
Liu, TA
;
Tani, M
;
Nakajima, M
;
Hangyo, M
;
Pan, CL
The photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs are demonstrated to have a useful bandwidth beyond 20 THz for a gating laser pulse width of 15 fs. The bandwidth and signal-to-noise ratio are compared with those of reference photoconductive antennas based on low-temperature grown GaAs. (C) 2003 American Institute of Physics.
Ultrabroadband terahertz field detection by proton-bombarded InP photoconductive antennas
(2004-06-28)
Liu, TA
;
Tani, M
;
Nakajima, M
;
Hangyo, M
;
Sakai, K
Photoconductive ( PC) antennas fabricated on InP bombarded with 180 keV protons of different dosages (InP:H+) all exhibit a useful bandwidth of about 30 THz, comparable to that of the LT-GaAs PC antenna. The peak signal current of the best InP: H+ device (dosage of 10(15) ions/cm(2)) is slightly higher than that of the LT-GaAs one, while the signal-to-noise ratio (SNR) of the former is about half of that of the latter due to lower resistivity. This suggests that InP: H+ can be a good substrate for THz PC antennas with proper annealing and/or implantation recipe. (C) 2004 Optical Society of America.