Browsing by Author "Nguyen, C. L."

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In0.5Ga0.5As-Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor Deposition
(2013-01-01)
Nguyen, H. Q.
;
Trinh, H. D.
;
Chang, E. Y.
;
Lee, C. T.
;
Wang, Shin Yuan
We demonstrate the good-performance In0.5Ga0.5As-based metal-oxide-semiconductor capacitor (MOSCAP) on GaAs substrate using metal-organic chemical vapor deposition technique. In0.5Ga0.5As film grown on GaAs substrate is proved to be high quality with threading dislocation density as low as 10(6) cm(-2). The performance of the MOSCAPs is comparable to that of In0.53Ga0.47As/InP-based devices grown by molecular beam epitaxy technique. The devices show a nice capacitance-voltage response, with small frequency dispersion. The parallel conductance contours show the free movement of Fermi level with the gate bias. Acceptable interface trap density D-it values of 5 x 10(11)-2 x 10(12) eV(-1) . cm(-2) in the energy range of 0.64-0.52 eV above the InGaAs valence band maximum in In0.5Ga0.5As/GaAs MOSCAPs obtained by conductance methods were shown.