Browsing by Author "Nguyen, Tuan Anh"

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Growth of high-quality In0.28Ga0.72Sb/AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition for single-channel Sb-based complementary metal-oxide-semiconductor applications
(2017-07-01)
Huynh, Sa Hoang
;
Ha, Minh Thien Huu
;
Do, Huy Binh
;
Nguyen, Tuan Anh
;
Yu, Hung Wei
The growth of high-quality In0.28Ga0.72Sb epilayer on an AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition is demonstrated. The In0.28Ga0.72Sb epilayer has a fully relaxed surface roughness of similar to 1.0nm and a low threading dislocation density of similar to 6.2 x 10(6)cm(-2). The valence band offset (VBO) of 3.11 eV and conduction band offset (CBO) of 3.21 eV for an Al2O3/In0.28Ga0.72Sb interface extracted from X-ray photoemission spectroscopy data highlight its suitability for use in single-channel InGaSb-based complementary metal-oxide-semiconductor (CMOS) applications. The type-I straddling gap of an In0.28Ga0.72Sb/AlSb heterojunction with a VBO of 0.47 eV and CBO of 0.65 eV is also sufficient to prevent both electron and hole leakage currents in CMOS devices. (C) 2017 The Japan Society of Applied Physics
Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices
(2017-08-01)
Do, Huy Binh
;
Luc, Quang Ho
;
Ha, Minh Thien Huu
;
Huynh, Sa Hoang
;
Nguyen, Tuan Anh
The degeneration of the metal/HfO2\ interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (MOSCAP). The low dissociation energy for the Pd-O bond was the reason for oxygen segregation. The PdOx layer contains O2- and OH- ions which are mobile during thermal annealing and electrical stress test. The phenomenon was not observed for the (Mo,Ni)/HfO2/InGaAs MOSCAPs. The results provide the guidance for choosing the proper metal electrode for the InGaAs based MOSFET. (C) 2017 Author(s).