Browsing by Author "Ningaraju, Vivek"

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A New High Voltage IC with Robust Isolation Design
(2018-01-01)
Ningaraju, Vivek
;
Lin, Horng-Chih
;
Chen, Po-An
;
Wen, Jiin-Shiarng
;
交大名義發表
A new and robust isolation design for control devices integrated in the high side island region of 250V high-voltage integrated circuits (HVIC) is proposed and verified by numerical calculations, simulations and experiments. The new isolation structure can be realized using micro N-well in the P-type isolation region to achieve a higher breakdown voltage (BV). The measurement and TCAD simulation results prove this new isolation structure's BV is over 350V with negligible leakage current. In the proposed scheme BV is improved by 15% more than the conventional structure without adding additional process steps and photo layers.
Improving breakdown voltage for 120 V level up shifter by using vertical and lateral assisted depletion layers in 0.35 mu m CMOS technology
(2020-04-01)
Ningaraju, Vivek
;
Lin, Horng-Chih
;
Chen, Po-An
;
Lin, Kuang-Lun
;
交大名義發表
A novel isolation structure featuring a vertical assisted depletion layer (VADL) by p-buried layer (PBL) and lateral assisted depletion layer (LADL) by micro-n-well (mu NW) for 120 V level up shifter is proposed. VADL and LADL efficiently prevents the premature breakdown of level shifter by fully depleting nLDMOS drain region and p-isolation (P-ISO) region respectively. By the effect of the electric field modulation, more uniform lateral and vertical electric fields are obtained due to the insertion of the VADL and LADL, which improves the breakdown voltage (BV) and device reliability. The breakdown and reliability mechanisms are investigated in detail by theoretical analysis, TCAD simulations and experimental measurements. The measured results shows, BV of 160 V and almost no HTRB degradation is seen after 168 h of stress. In addition, the new structure is fully compatible with standard 0.35 mu m CMOS technology. Hence, it is not only a performance booster but also a low-cost solution. (C) 2020 The Japan Society of Applied Physics