Browsing by Author "O'Neil, ML"

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Heat, moisture and chemical resistance on low dielectric constant (low-k) film using diethoxymethylsilane (DEMS) prepared by plasma enhanced chemical vapor deposition
(2006-02-24)
Cheng, YL
;
Wang, YL
;
Lan, JK
;
Hwang, GJ
;
O'Neil, ML
Resistance of low dielectric constant (low-k) dielectrics, deposited using Diethoxymethylsilane (DEMS) precursor and helium (He) carrier gas with or without oxygen (O-2) reaction gas, against heat, moisture stress and chemical treatment is clarified. The low dielectric constant organosilicate glass (OSG) films deposited using DEMS and O-2 is shown to be the most reliable: the dielectric constant are stable even after a heating test at 700 degrees C and a pressure cooker test (PCT) for 168 h. This stability is high enough to ensure the low-k properties throughout fabricating multilevel interconnects and long-term reliability after the fabrication. This is due to the stability of Si-CH3 bonds and more Si-C-Si- bonds, which has high degree of cross-linking. However, the degradation of the dielectric constant occurs after O-2 plasma ashing process. The nitrogen plasma treatment is proposed to prevent the damage from O-2 attack in the low-k films deposited using DEMS precursor. (c) 2005 Elsevier B.V. All rights reserved.
Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material
(2004-01-30)
Cheng, YL
;
Wang, YL
;
Wu, YL
;
Liu, CP
;
Liu, CW
The low dielectric constant (low-k) of organo-silica-glass (OSG) and fluorine-incorporated OSG (OFSG) materials produced from plasma-enhanced chemical vapor deposition of trimethylsilane are thermally stable to greater than 600 degreesC. FTIR analysis indicates that Si-CH3 bonds and Si-F bonds remain intact to temperatures well above that normally encountered during integrated circuit manufacture, allowing these materials to maintain a low-k value. While OFSG materials proved to have less hydrolytic resistant than their non-fluorinated analogs during high pressure, high temperature water exposure (pressure cooker test), their leakage current was found to be lower than OSG films before and after wafer exposure. The measured properties of OFSG blanket films suggest that this material is sufficiently robust to ensure stability of reliability after the fabrication. (C) 2003 Elsevier B.V. All rights reserved.