Browsing by Author "Oates, A. S."

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A comprehensive model for plasma damage enhanced transistor reliability degradation
(2007)
Weng, W. T.
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Oates, A. S.
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Huang, Tiao-Yuan
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
We present a comprehensive set of measurements to assess the impact of plasma processing induced damage on NBTI and hot carrier reliability as a function of technology scaling. We demonstrate for the first time that both hot carrier and NBTI are impacted similarly by device antenna ratio, transistor active area and gate oxide thickness, while failure distributions exhibit significant deviations from lognormal as a result of plasma damage. We develop a model to explain the observed experimental dependences and to accurately simulate failure distributions in the presence of plasma damage.
Field Dependence of Porous Low-k Dielectric Breakdown as Revealed by the Effects of Line Edge Roughness on Failure Distributions
(2011-03-01)
Lee, S. C.
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Oates, A. S.
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Chang, K. M.
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
We investigate the electric field (E) dependence of the breakdown of porous low-k dielectrics by measuring the changes in the failure time distribution resulting from the presence of line edge roughness. We show that the Weibull beta increases with decreasing field, clearly demonstrating that dielectric breakdown does not exhibit 1/E or E(-n) characteristics.
FUNDAMENTAL UNDERSTANDING OF POROUS LOW-K DIELECTRIC BREAKDOWN
(2009)
Lee, Shou-Chung
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Oates, A. S.
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Chang, Kow-Ming
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
We investigate the impact of porosity on the reliability of low-k dielectrics. We show that electric field enhancement around pores occurs and is significantly increased by Cu interaction, suggesting a new potential mechanism for breakdown of dielectrics at stress conditions. We develop of an analytic model to predict failure distribution parameters as a function of porosity and show that the model is in good agreement with measurements for porosity in the range of 5% to 40%. We explain why the field acceleration factor 7 is a constant for all silica-based material according to percolation theory. We propose that the percolation path difference between high field and low field would make the field dependence on failure time become non-linear.
Limitation of low-k reliability due to dielectric breakdown at vias
(2008)
Lee, Shou-Chung
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Oates, A. S.
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Chang, Kow Ming
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
We investigate dielectric reliability associated with vias in low-k dielectric interconnects. We show that the failure mechanism of vias is identical to that of damascene lines, and occurs at the interface between the low-k and Cu-capping layers. We develop a model to accurately simulate failure distributions of via and line-only structures based on the assumption that the minimum dielectric space (highest local field) determines failure times. Via structures ultimately limit dielectric reliability of circuits because of the space reduction associated with via overlay tolerance between metal levels. We compare voltage ramp and constant voltage testing techniques and demonstrate their equivalence for via-related dielectric reliability estimation.