Browsing by Author "Ogata, Ken"

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Dual layer semiconducting nanocomposite of silicon nanowire and polythiophene for organic-based field effect transistors
(2016-08)
Hsieh, Gen-Wen
;
Wu, Jia-Yuan
;
Ogata, Ken
;
Cheng, Kuang-Yao
;
光電工程學系
We investigate a dual layer active channel of random distributed intrinsic silicon nanowires and solution processing semiconducting polythiophene polymers for organic-based field effect transistors. Primary results show that low density silicon nanowire networks could enhance the effective charge carrier mobility of polythiophene transistors by a factor of six, suggesting that these nanowires act as rapid one-dimensional charge transport bridges in the active channel. Moreover, increasing the nanowire loading in the dual layer nanocomposite could further lessen the transistor hysteresis. The lifetime test of nanowire-polythiophene devices is found to be more sustainable with respect to that of pristine polythiophene in ambient air. These results indicate that semiconducting nanowires should be considered as a viable additive to active channel for next-generation organic field effect transistors. (C) 2016 Elsevier B.V. All rights reserved.
Stretched Contact Printing of One-Dimensional Nanostructures for Hybrid Inorganic-Organic Field Effect Transistors
(2012-03-29)
Hsieh, Gen-Wen
;
Wang, JinJin
;
Ogata, Ken
;
Robertson, John
;
Hofmann, Stephan
We demonstrate a stretched contact printing technique to assemble one-dimensional nanostructures with controlled density and orientation from either dry or wet sources. The random, chaotically arranged nanostructures can gradually transform to a highly aligned configuration. Our results show that up to 90% of the printed nanowires are aligned within +/- 15 degrees of the primary stretching direction. This approach is easily applicable to a variety of nanowires and nanotubes on different substrates, and we demonstrate various field effect transistors with nanowire and hybrid nanowire-polymer networks. The hybrid inorganic-organic transistors based on a parallel aligned nanowire network and a semiconducting polymer revealed a significant enhancement in transistor mobility, a 10-fold reduction in subthreshold slope (similar to 0.26 V decade(-1)), and superior air stability compared to a pristine polymer host.
Stretching-Assembled Nanowires for Organic-Based Thin Film Transistors
(2012-01-01)
Hsieh, Gen-Wen
;
Ogata, Ken
;
Cheng, Kuang-Yao
;
Wu, Jia-Yuan
;
Milne, William I.
We demonstrate a stretched contact-printing technique to assemble one-dimensional nanostructures with controlled density and orientation. Over 90% nanowires are highly aligned along the primary stretching direction. Specifically, The hybrid inorganic-organic TFTs based on a parallel-aligned nanowire network and a semiconducting polymer reveal a significant positive enhancement in transistor performance and air-stability.