Browsing by Author "Ou, JH"

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Effects of growth temperature on solid incorporation of AlAs1-xSbx using tertiarybutylarsine as arsenic source precursor
(1996-10-01)
Chen, WK
;
Ou, JH
;
Hsu, CH
;
交大名義發表
;
電子物理學系
We have investigated the effects of growth temperature on the solid incorporation of AlAsSb epilayers grown LJ metalorganic vapor-phase epitaxy using TMAl, TBAs and TMSb as source precursors. The solid incorporation of AlAsSb was found to be strongly affected by the pyrolysis reactions and kinetics of the source precursors, in particular, TMAl and TBAs. Our experimental results indicated that the, Al incorporation efficiency increases with the growth temperature and saturates at temperatures above similar to 625 degrees C. On the other hand, the growth behavior of As is anomalous: the As incorporation efficiency increases initially with growth temperature, and decreases monotonously at temperatures above similar to 550 degrees C. The reduced As incorporation efficiency at high temperatures may be closely related to the beta-elimination process of TBAs, and to the formation of adducts in the gas phase.
Effects of growth temperature on solid incorporation of AlAs1-xSbx using tertiarybutylarsine as arsenic source precursor
(1996-10-01)
Chen, WK
;
Ou, JH
;
Hsu, CH
;
電子物理學系
;
Department of Electrophysics
We have investigated the effects of growth temperature on the solid incorporation of AlAsSb epilayers grown LJ metalorganic vapor-phase epitaxy using TMAl, TBAs and TMSb as source precursors. The solid incorporation of AlAsSb was found to be strongly affected by the pyrolysis reactions and kinetics of the source precursors, in particular, TMAl and TBAs. Our experimental results indicated that the, Al incorporation efficiency increases with the growth temperature and saturates at temperatures above similar to 625 degrees C. On the other hand, the growth behavior of As is anomalous: the As incorporation efficiency increases initially with growth temperature, and decreases monotonously at temperatures above similar to 550 degrees C. The reduced As incorporation efficiency at high temperatures may be closely related to the beta-elimination process of TBAs, and to the formation of adducts in the gas phase.
RHEED intensity oscillations in homoepitaxial growth of SrTiO3 films
(2000-07-01)
Lee, JY
;
Juang, JY
;
Ou, JH
;
Chen, YF
;
Wu, KH
The amplitude and periodicity of the reflection high-energy electron diffraction (RHEED) oscillations displayed strong temperature dependence in homoepitaxy of SrTiO3(STO) films. Combining with the AFM observations, the results suggest that the oscillations are not directly related to the layer-by-layer growth. (C) 2000 Elsevier Science B.V. All rights reserved.