Browsing by Author "Ouyang, Hao"

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Direct Synthesis and Practical Bandgap Estimation of Multilayer Arsenene Nanoribbons
(2016-01-26)
Tsai, Hsu-Sheng
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Wang, Sheng-Wen
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Hsiao, Ching-Hung
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Chen, Chia-Wei
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Ouyang, Hao
Effects of Laser Sources on Damage Mechanisms and Reverse-Bias Leakages of Laser Lift-Off GaN-Based LEDs
(2009)
Cheng, Ji-Hao
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Wu, YewChung Sermon
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Peng, Wei Chih
;
Ouyang, Hao
;
材料科學與工程學系
The frequency-tripled neodymium-doped yttrium aluminum garnet laser (355 nm) and the KrF pulsed excimer laser (248 nm) were employed to separate GaN thin films from sapphire substrates and to transfer the films to bond with other substrates. The different laser lift-off processes would generate the dislocation density on different regions. In this study, the effects of these two laser sources on structural damage mechanisms and reverse-bias leakages of InGaN-GaN light-emitting diodes (LEDs) were studied.
Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based light-emitting diodes
(2007-06-18)
Wu, Yewchung Sermon
;
Cheng, Ji-Hao
;
Peng, Wei Chih
;
Ouyang, Hao
;
材料科學與工程學系
The KrF pulsed excimer laser (248nm) and the frequency-tripled neodymium doped yttrium aluminum garnet laser (355nm) have been used to separate GaN thin films from sapphire substrates and transfer to bond other substrate. However, these processes would increase the dislocation density, resulting in an increase of the leakage current. In this study, the effects of these two laser sources on the reverse-bias leakages of InGaN-GaN light-emitting diodes were studied. (c) 2007 American Institute of Physics.
Fabrication of Multilayer Borophene on Insulator Structure
(2016-10-12)
Tsai, Hsu-Sheng
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Hsiao, Ching-Hung
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Lin, Yu-Pin
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Chen, Chia-Wei
;
Ouyang, Hao
The Influence of Surface Oxide on the Growth of Metal/Semiconductor Nanowires
(2011-07-01)
Lu, Kuo-Chang
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Wu, Wen-Wei
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Ouyang, Hao
;
Lin, Yung-Chen
;
Huang, Yu
We report the critical effects of oxide on the growth of nanostructures through silicide formation. Under an in situ ultrahigh vacuum transmission electron microscope, it is observed from the conversion of Si nanowires into the metallic PtSi grains epitaxially through controlled reactions between lithographically defined Pt pads and Si nanowires. With oxide, instead of contact area, single crystal PtSi grains start forming either near the center between two adjacent pads or from the ends of Si nanowires, resulting in the heterostructure formation of Si/PtSi/Si. Without oxide, transformation from Si into PtSi begins at the contact area between them, resulting in the heterostructure formation of PtSi/Si/PtSi. The nanowire heterostructures have an atomically sharp interface with epitaxial relationships of Si(20-2)//PtSi(10-1) and Si[111]//PtSi[111]. Additionally, it has been observed that; the existence of oxide significantly affects not only the growth position but also the growth behavior and the growth rate by two orders of magnitude. Molecular dynamics simulations have been performed to support our experimental results and the proposed growth mechanisms. In addition to fundamental science, the significance of the study matters for future processing techniques in nanotechnology and related applications as well.