Browsing by Author "PAN, HT"

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A DIRECT APPROACH TO THE MODELING OF POLYDIHEXYLSILANE AS A CONTRAST ENHANCEMENT MATERIAL
(1990-11-01)
LOONG, WA
;
PAN, HT
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
In our study the polydihexylsilane (PDHS), as a contrast enhancement material, we found that the values of A, B, and C of Dill's modeling parameters of PDHS are irregularly dependent on its film thickness, and also refractive index decreases during exposure. These difficulties make Dill's model inadequate for the simulation of contrast enhanced lithography. A new model was derived to simulate the nonlinear photobleaching curves of PDHS with varying thickness. Linearity was found with parameters in this equation as a function of PDHS film thickness. The thicker PDHS film does not improve the contrast within the usually used thickness range of 0.1-0.6-mu-m. This equation also models the nonlinear bleaching curve of p-diazo-N, N-dimethylaniline-chloride zinc chloride and the reported bleaching curve of CEM-2 quite well.
ANOMALOUS REVERSE SHORT-CHANNEL EFFECT IN P+ POLYSILICON GATED P-CHANNEL MOSFET
(1994-11-01)
CHANG, CY
;
LIN, CY
;
CHOU, JW
;
HSU, CCH
;
PAN, HT
The boron-penetration-dependent Reverse Short Channel Effect (RSCE) on the threshold voltage is observed for short channel p+ poly-gate PMOSFET's. The RSCE is found to be more significant as the boron penetration becomes more severe. The RSCE is significant in BF2 doped poly-gated MOS devices and is alleviated in buffered poly-gated MOS devices. Fluorine enhanced boron diffusion in the gate oxide during high temperature process is believed to account for the RSCE, which is also confirmed by using a two-dimensional process simulator.
THE MODELING AND SIMULATION OF NONLINEAR PHOTOBLEACHING MATERIALS
(1991-03-01)
LOONG, WA
;
PAN, HT
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
We found that the Dill's parameters of nonlinearly photobleaching materials of p-diazo-N,N-dimethylaniline chloride zinc chloride(DZC) and poly(di-n-hexylsilane) (PDHS) are irregularly dependent on their film thickness, and also their refractive indexes change during exposure. These difficulties make Dill's model inadequate for the simulation of nonlinear photobleaching materials used in contrast enhanced lithography. A direct approach was proposed to solve these difficulties. Equations with four parameters were derived to simulate the bleaching curves of DZC, PDHS and reported bleaching curve of CEM-2. Equations correlated very well with these curves by using best fitted parameters. Linearity was found with parameters in these equations as a function of film thickness of DZC and PDHS. Based on this linearity, simulations of these nonlinear bleaching curves are more accurate than those using Dill's model.
THE SIMULATION OF CONTRAST-ENHANCED LITHOGRAPHY
(1991-09-01)
LOONG, WA
;
PAN, HT
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
The Dill's parameters of nonlinear photobleaching materials of p-diazo-N,N-dimethylaniline chloride zinc chloride (DZC) and poly(di-n-hexylsilane) (PDHS) are irregularly dependent on their film thickness, and also their refractive indexes change during exposure. These difficulties make Dill's model inadequate for the simulation of nonlinear photobleaching materials used in contrast-enhanced lithography. A direct approach was proposed to solve these difficulties. Equations with four parameters were derived to simulate the nonlinear photobleaching curves of DZC, PDHS and other nonlinear photobleaching curves reported in literature. The equations correlated verv well with these curves by using best-fit parameters. Linearity was found with these four parameters in these equations as a function of film thicknesses of DZC and PDHS. Based on this linearity, the modelling and simulation of these nonlinear photobleaching materials as contrast-enhancement layers are more convenient and accurate than those using Dill's model.