Browsing by Author "Pan, Ci-Ling"

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12.5-Gb/s Wireless Data Transmission by Using Bias Modulation of NBUTC-PD Based W-Band Photonic Transmitter-Mixer
(2010)
Kuo, F. -M.
;
Yen-Lin, Ho
;
Shi, J. -W.
;
Chen, Nan-Wei
;
Jiang, Wen-, Jr.
We demonstrated near-ballistic uni-traveling-carrier photodiode based broadband photonic transmitter-mixers with quasi-Yagi radiators fed horn antennas. 100GHz wireless transmission with date rate as high as 12.5-Gb/s via bias modulation under high photocurrent (20mA) has been achieved. (C)2009 Optical Society of America
3D Ferroelectric-like NVM/CMOS Hybrid Chip by sub-400 degrees C Sequential Layered Integration
(2012-01-01)
Lien, Yu-Chung
;
Shieh, Jia-Min
;
Huang, Wen-Hsien
;
Hsieh, Wei-Shang
;
Tu, Cheng-Hui
For the first time, a sequentially processed 3D hybrid chip is demonstrated by stacking low-temperature (LT) Ferroelectric-like (FE-like) metal-oxide nonvolatile memory (NVM) and CMOS. The high-mobility (333 and 113 cm(2)/V-s) and low-subthreshold swing (97 and 112 mV/decade) N/P-type thin film transistors (TFTs) construct stacked inverters showing sharp transfer characteristic as the fundamental element of CMOS array and stacked 3D NVMs. The sequential layered integration is enabled by cutting-edge low thermal-budget plasma/laser processes and self-assembled FE-like metal-oxide materials. The implementation of sub-400 degrees C new-type metal-ion (Eu+3)-mediated atomic-polar-structured (Eu+3-APS) dielectric realizes stackable FE-like NVMs with program speed of 100 nanosecond, toward future 3D layered CMOS with giant high-speed dat-storage application era.
40 Gb/s on-off keying downstream and 10 Gb/s on-off keying remodulated upstream signals in long-reach access network with multivideo services
(2011-12-01)
Yeh, Chien-Hung
;
Chow, Chi-Wai
;
Liu, Yen-Liang
;
Pan, Ci-Ling
;
光電工程學系
In this demonstration, we propose and investigate a long reach passive optical network (PON) using four wavelength-multiplexed signals with both on-off keying modulations for 40 Gb/s downlink traffic in 100 km fiber transmission without dispersion compensation. In the exchange node, we can use four channels with video services broadcasting to each optical network unit (ONU) for the uplink signal remodulation. Hence, four wavelength-multiplexed video signals also can be used to inject into the corresponding reflective semiconductor optical amplifiers in each ONU for uplink signal remodulation to achieve a 4 x 2.5 Gb/s data rate. In addition, under the 32 split ratio PON system, the power penalties of nearly 6.7 and 1 dB could be measured at the bit error rate of 10(-9) for the downlink and uplink traffic, respectively. (C) 2011 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.3662395]
56 Gb/s OOK transmission in robust and bend-insensitive GGP 80-m ultra-large-core (ULC) MMF for lightpeak
(2015-03-01)
Chow, Chi-Wai
;
Yang, Ling-Gang
;
Sung, Jiun-Yu
;
Su, Hong-Quan
;
Yeh, Chien-Hung
We demonstrate for the first time a recorded 56-Gb/s transmission in a new type robust and bend-insensitive glass-glass-polymer structured 80-m ultra-large-core multimode fiber (ULCMMF) using simple and single-polarization on-off-keying for Lightpeak. The LCMMF design is presented. Experimental results show that the ULCMMF could be a good choice for consumer applications in the near future.
A terahertz plastic wire based evanescent field sensor for high sensitivity liquid detection
(2010)
You, Borwen
;
Lu, Ja-Yu
;
Pan, Ci-Ling
;
Liu, Tze-An
;
Peng, Jin-Long
A highly sensitive detection method based on the evanescent wave of a terahertz subwavelength plastic wire was demonstrated for liquid sensing. A 20ppm melamine alcohol solution is successfully identified with refractive-index sensitivity of 0.01. (C)2010 Optical Society of America
A terahertz plastic wire based evanescent field sensor for high sensitivity liquid detection
(2009-11-09)
You, Borwen
;
Liu, Tze-An
;
Peng, Jin-Long
;
Pan, Ci-Ling
;
Lu, Ja-Yu
A highly sensitive detection method based on the evanescent wave of a terahertz subwavelength plastic wire was demonstrated for liquid sensing. Terahertz power spreading outside the wire core makes the waveguide dispersion sensitive to the cladding index variation, resulting in a considerable deviation of waveguide dispersion. Two liquids with transparent appearances, water and alcohol, are easily distinguished based on the waveguide dispersion, which is consistent with theoretical predictions. A melamine alcohol solution with various concentrations is identified successfully, and the detection limit is up to 20ppm, i.e. equivalent to the index variation on the order of 0.01. (C) 2009 Optical Society of America
Achromatic Liquid Crystal Phase Plate for Short Laser Pulses
(2010)
Pan, Ru-Pin
;
Lai, Cheng-Wei
;
Lin, Chia-Jen
;
Hsieh, Cho-Fan
;
Pan, Ci-Ling
This work demonstrates the feasibility of reducing pulse broadening by using liquid crystal achromatic half and quarter wave plates for ultrafast pulsed lasers. Each wave plate is made of two and three liquid crystal cells stacked together. Total phase retardation and its broadening reducing of the achromatic half wave plate have been measured. The experimental results are in good agreement with theoretical calculation.
Air-core microstructure fiber for terahertz radiation waveguiding
(2007)
Lu, Ja-Yu
;
Yu, Chin-Ping
;
Chang, Hung-Chung
;
Chen, Hung-Wen
;
Li, Yu-Tai
We demonstrate a simple and low-loss THz microstructure fiber for broadband THz waveguiding, which is constructed by using the highly flexible and readily available materials. Substantially low attenuation constant less than 0.01 cm(-1) has been achieved. (c) 2006 Optical Society of America
All-optical decision-gating of 10-Gb/s RZ data in a semiconductor optical amplifier temporally gain-shaped with dark-optical-comb
(2007-07-01)
Lin, Gong-Ru
;
Yu, Kun-Chieh
;
Pan, Ci-Ling
;
Liao, Yu-Sheng
;
光電工程學系
We demonstrate a novel all-optical noninverted OC-192 return-to-zero (RZ) decision-gate by using a semiconductor optical amplifier (SOA) which is gain-controlled to achieve an extremely high cross-gain-modulation depth and a narrow gain window. A dark-optical-comb generated by reshaping the optical clock RZ data in a Mach-Zehnder intensity modulator is employed as an injecting source to temporally deplete most of the gain in the SOA. Such a dark-optical-comb injected SOA decision-gate exhibits improved 311 regeneration performances such as a timing tolerance of 33.5 ps, a Q-factor of 8.1, an input dynamical tolerance of 14 dB, and an extinction ratio (ER) of 14 dB. The deviation between the wavelengths of backward injected dark-optical-comb and input RZ data for optimizing the ER of the decision-gate is determined as Delta lambda = 19 nm. Under a threshold operating dark-optical-comb power of 7 dBm, such a decision-gate can recover the - 18.5-dBm degraded RZ data with a bit-error-rate of less than 10(-9) at 10 Gb/s. A negative power penalty of -4.2 dB is demonstrated for the RZ data after 50-km propagation and decision gating.
Analysis of terahertz pulses from large-aperture biased semi-insulating and arsenic-ion-implanted GaAs antennas
(2008-09-01)
Chou, Rone-Hwa
;
Liu, Tze-An
;
Pan, Ci-Ling
;
光電工程學系
;
Department of Photonics
We investigate the characteristics of terahertz radiation pulses generated using biased semi-insulating and arsenic-ion-implanted GaAs photoconductive antennas with 1.5 cm aperture size under various pump fluences and bias fields. Compared with semi-insulating GaAs antenna, our arsenic-ion-implanted GaAs antenna exhibits larger bandwidth and better emission efficiency. Our simulation verifies that the superior characteristics for the latter can be partly attributed to larger optical absorption in the ion-implanted layer. For both types of antennas, we observe that the radiated peak terahertz amplitude displays an anomalous dependence on pump fluence, which deviates from the prediction given by the scaling rule. Analyzing the theoretical and simulation results, we infer that this behavior arises from band filling and two-photon absorption effects. At specific pump fluence, we find that the dependence of peak terahertz amplitude on bias field is distinct from the usual linear relationship predicted by the scaling rule. (c) 2008 American Institute of Physics.
Bandwidth enhancement phenomenon of a high-speed GaAs-AlGaAs based unitraveling carrier photodiode with an optimally designed absorption layer at an 830 nm wavelength
(2006-07-31)
Shi, Jin-Wei
;
Li, Yu-Tai
;
Pan, Ci-Ling
;
Lin, M. L.
;
Wu, Y. S.
In this letter, the authors introduce a GaAs/AlGaAs based unitraveling carrier photodiode (UTC-PD) for a wavelength of around 830 nm. There is significant bias- and output-current-dependent bandwidth enhancement phenomena observed with this device. According to their microwave and optical-to-electrical measurement results, such distinct phenomena can occur under a much lower current density (0.3 mA/mu m(2) vs 0.05 mA/mu m(2)) than previously reported for InP-InGaAs UTC-PDs. This can be attributed to the self-induced field in the absorption region, made possible due to the optimized p-type doping profile. (c) 2006 American Institute of Physics.
Bipolar Cascade Superluminescent Diodes at the 1.04-mu m Wavelength Regime
(2009-03-01)
Guol, Shi-Hao
;
Wang, Jr-Hung
;
Wu, Yu-Huei
;
Lin, Wei
;
Yang, Ying-Jay
In this study, we investigate the performance of GaAs-based bipolar cascade superluminescent diodes with different cavity lengths. The device operates around the important bio-optical therapeutic 1.04-mu m wavelength window. The introduction of tunnel junctions tends to minimize the nonuniform carrier distribution between distinct multiple quantum-wells (QWs), which is a problem in conventional SLDs, whose electroluminescent spectra are governed by the center wavelength of QWs near the p-side. Our devices exhibit nice electrical characteristics of low leakage current and overcome the limitation of nonuniform carrier distribution, thereby presenting a promising prospect for the near infrared white-light sources.
Blue-light generating femtosecond wavelength-tunable non-collinear optical parametric amplifier
(2006-03-02)
Pan, Ci-Ling
;
Huang, J. Y.
;
Zhang, Jing-Yuan
;
Lee, Chao-Kuei
The present invention discloses a means of the generation of tunable femtosecond pulses from 380 nm to 465 nm near the degenerate point of a 405-nm pumped type-I BBO non-collinearly phase-matched optical parametric amplifier (NOPA). The tunable UV/blue radiation is obtained from sum frequency generation (SFG) between the OPA output and the residual fundamental beam at 810-nm and cascaded second harmonic generation (SHG) of OPA. With a pumping energy of 75 mJ at 405 nm, the optical conversion efficiency from the pump to the tunable SFG is more than 5% and the efficiency of SHG of the OPA is about 2%.
Broadband terahertz conductivity and optical transmission of indium-tin-oxide (ITO) nanomaterials
(2013-07-15)
Yang, Chan-Shan
;
Chang, Chan-Ming
;
Chen, Po-Han
;
Yu, Peichen
;
Pan, Ci-Ling
Indium-tin-oxide (ITO) nanorods (NRs) and nanowhiskers (NWhs) were fabricated by an electron-beam glancing-angle deposition (GLAD) system. These nanomaterials are of interests as transparent conducting electrodes in various devices. Two terahertz (THz) time-domain spectrometers (TDS) with combined spectral coverage from 0.15 to 9.00 THz were used. These allow accurate determination of the optical and electrical properties of such ITO nanomaterials in the frequency range from 0.20 to 4.00 THz. Together with Fourier transform infrared spectroscopic (FTIR) measurements, we found that the THz and far-infrared transmittance of these nanomaterials can be as high as 70% up to 15 THz, as opposed to about 9% for sputtered ITO thin films. The complex conductivities of ITO NRs, NWhs as well films are well fitted by the Drude-Smith model. Taking into account that the volume filling factors of both type of nanomaterials are nearly same, mobilities, and DC conductivities of ITO NWhs are higher than those of NRs due to less severe carrier localization effects in the former. On the other hand, mobilities of sputtered ITO thin films are poorer than ITO nanomaterials because of larger concentration of dopant ions in films, which causes stronger carrier scattering. We note further that consideration of the extreme values of Re{sigma} and Im{sigma} as well the inflection points, which are functions of the carrier scattering time (tau) and the expectation value of cosine of the scattering angle (gamma), provide additional criteria for accessing the accuracy of the extraction of electrical parameters of non-Drude-like materials using THz-TDS. Our studies so far indicate ITO NWhs with heights of similar to 1000 nm show outstanding transmittance and good electrical characteristics for applications such as transparent conducting electrodes of THz Devices. (C) 2013 Optical Society of America
Carrier-Envelope-Phase Control of Ultrashort Periodic Pulses Synthesized from Raman Generated Combs
(2009-01-01)
Hsieh, Zhi-Ming
;
Lai, Chien-Jen
;
Chan, Han-Sung
;
Wu, Sih-Ying
;
Lee, Chao-Kuei
The carrier-envelope phase of Raman generated ultrashort pulses is controlled by driving the Raman coherence with a beam at near the raman resonance frequency and its second harmonic.
Cascade Laser Power Converter for Simultaneous 10 Gbps Data Detection and Efficient Optical-to-Electrical DC Power Generation
(2011-01-01)
Kuo, F. -M.
;
Lo, S. -S.
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Pan, Ci-Ling
;
Shi, J. -W.
;
物理研究所
We demonstrate a novel device; cascade high-speed laser power converter. Error-free 10 Gbit/sec data detection and 21.1% optical-to-electrical DC power generation efficiency can be achieved simultaneously at 850nm wavelength and +1V voltage. (C) 2011 Optical Society of America
Characterization and Applications of Liquid Crystals in the THz Frequency Range
(2012-01-01)
Pan, Ci-Ling
;
Pan, Ru-Pin
;
電子物理學系
;
Department of Electrophysics
The applications of liquid-crystal-based devices the sub-millimeter wave or THz (1 THz = 10(12) Hz) frequency range has blossomed recently. In this paper, we review the methodology for determination of the THz optical constants of nematic liquid crystals, using E7 as an example. To demonstrate potential applications, we report an electrically tuned THz Solc filter.
Characterization and Comparison of GaAs/AlGaAs Uni-Traveling Carrier and Separated-Transport-Recombination Photodiode Based High-Power Sub-THz Photonic Transmitters
(2010-01-01)
Li, Yu-Tai
;
Shi, Jin-Wei
;
Huang, C. -Y.
;
Chen, Nan-Wei
;
Chen, Shu-Han
We describe in detail the characterization of two high-power photonic transmitters based on two different kinds of high-power photodiodes, one a GaAs/AlGaAs based uni-traveling-carrier photodiode (UTC-PD) and the other a separated-transport-recombination photodiode (STR-PD). The diodes operate under optical pulse excitation at the 800 nm wavelength. Both PDs have the same total depletion layer thickness (same theoretical RC-limited bandwidth) and are m integrated with the same broadband micro-machined circular disk monopole antennas to radiate strong sub-THz pulses. However the STR-PD based transmitter exhibits very different dynamic and static performance from that of the UTC-PD based transmitter due to the existence of a low-temperature-grown GaAs (LTG-GaAs) based recombination center inside the active region, and the much thinner thickness of effective depletion layer. Under optical pulse excitation (similar to 480 pJ/pulse), the STR-PD based transmitter exhibits a much lower maximum averaged output photocurrent (1.2 mA versus 0.3 mA) than that of the UTC-PD transmitter, although the radiated electrical pulse-width and maximum peak-power, which are measured by the same THz time-domain spectroscopic (TDS) system, of both devices are comparable. These results indicate that although the recombination center in the STR-PD degrades its DC responsivity, it effectively improves the high-speed and output power performance of the device and eliminates the DC component of the photocurrent, which should minimize device-heating problem during high-power operation. The radiated waveforms of both devices under intense optical pulse illumination also exhibit excellent linearity and strong bias dependent magnitude. This suggests their suitability for application as photonic emitters and possibly as a data modulator in sub-THz impulse-radio communication systems.
Characterization of a Sub-THz Photonic Transmitter Based on a Sep arated-Tran sp o rt-Recombin ation Photodiode
(2007)
Shi, J. -W.
;
Li, Yu-Tai
;
Pan, Ci-Ling
;
Chiu, C. -H.
;
Liu, W. -S.
By incorporating low-temperature-grown GaAs based separated-transport-recombination photodiode with micromachined antenna, such photonic-transmitter can radiate strong sub-THz waves at designed frequency (similar to 500GHz) without using Si-lens. Problems of device saturation under high bias voltage were also eliminated. (C) 2005 Optical Society of America
Characterization of sub-THz photonic-transmitters based on CaAs-AlGaAs uni-traveling-carrier photodiodes and substrate-removed broadband antennas for impulse-radio communication
(2008-07-01)
Li, Yu-Tai
;
Shi, J. -W.
;
Huang, Cheng-Yu
;
Chen, Nan-Wei
;
Chen, Shu-Han
A novel photonic transmitter for wireless terahertz (THz) impulse-radio (IR) communication is realized by monolithic integration of a GaAs-AlGaAs-based uni-traveling-carrier (UTC) photodiode with a substrate-removed broadband antenna. The device can radiate strong sub-THz pulses (20-mW peak-power) with a narrow pulsewidth (< 2 ps) and wide bandwidth (100 similar to 250 GHz). The maximum average power emitted by our device, under the same THz time-domain spectroscopic setup, is around ten times higher than that of the low-temperature-grown GaAs-based photoconductive antenna, while with a much lower dc bias (9 versus 35 V). The bias-dependent peak output powers of our devices suggest their suitability for application as a data modulator/emitter for photonic THz IR communication.