Browsing by Author "Pan, TJ"

Now showing 1 - 2 of 2

Influence of N2O plasma treatment on microstructure and thermal stability of WNx barriers for Cu interconnection
(2004-05-01)
Tsai, KC
;
Wu, WF
;
Chen, JC
;
Pan, TJ
;
Chao, CG
Thermal stabilities of Cu-contacted n(+)-p junctions with tungsten nitride (WNx) diffusion barriers deposited at various nitrogen flow ratios are investigated. N2O plasma treatment is applied to improve thermal stability and barrier performance of WNx film. Sheet resistance Of Cu/N2O plasma-treated WNx/Si is fairly stable even after annealing at 750degreesC for 30 min. Moreover, N2O plasma treatment enables the Cu/WNx/n(+)-p junction-diodes to sustain thermal annealing at 600 degreesC without electrical degradation. Auger electron spectroscopy depth profiles show that Cu diffusion through the N2O plasma-treated WNx barrier is extremely limited, even after annealing at 675 degreesC. Analyses of transmission electron microscopy and x-ray photoemission spectroscopy show that nitridation and oxidation on the WNx barrier occur and an amorphous layer is formed after N2O plasma treatment. (C) 2004 American Vacuum Society.
Numerical and experimental analysis of Cu diffusion in plasma-treated tungsten barrier
(2005)
Tsai, KC
;
Wu, WF
;
Chen, JC
;
Pan, TJ
;
Chao, CG
This work investigates Cu diffusion in sputtered and N2O plasma-treated W films. N2O plasma-treated W barrier has a nanostructured surface layer and shows high thermal stability and the best barrier properties. Also investigated herein are the lattice and grain boundary diffusivities extracted from the Cu penetration depth profiles using the Whipple analysis of grain boundary diffusion and Fick's second law of diffusion. Analysis indicates that the diffusion models correlate well with experimental results. (C) 2004 The Electrochemical Society.