Browsing by Author "Pan, Yin-Chih"

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High performance of graphene oxide-doped silicon oxide-based resistance random access memory
(2013-11-21)
Zhang, Rui
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Chang, Kuan-Chang
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Chen, Kai-Huang
In this letter, a double active layer (Zr:SiO (x) /C:SiO (x) ) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiO (x) layer. Compared with single Zr:SiO (x) layer structure, Zr:SiO (x) /C:SiO (x) structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process.
Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
(2013-05-01)
Chang, Kuan-Chang
;
Zhang, Rui
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Lou, J. C.
In this letter, a double-active-layer (Zr:SiOx/C:SiOx) resistive switching memory device with a high ON/OFF resistance ratio and small working current (0.02 mA), is presented. Through the analysis of Raman and Fourier transform infrared spectroscopy spectra, we find that graphene oxide exists in the C:SiOx layer. It can be observed that Zr:SiOx/C: SiOx structure has superior switching performance and higher stability compared with the single-active-layer (Zr:SiOx) structure, which is attributed to the existence of graphene oxide flakes formed during the sputter process. I-V characteristics under a series of increasing temperature were analyzed to testify the carrier hopping distance variation, which is further verified by our graphene oxide redox reaction model.
Performance and characteristics of double layer porous silicon oxide resistance random access memory
(2013-06-24)
Tsai, Tsung-Ming
;
Chang, Kuan-Chang
;
Zhang, Rui
;
Chang, Ting-Chang
;
Lou, J. C.
A bilayer resistive switching memory device with an inserted porous silicon oxide layer is investigated in this letter. Compared with single Zr:SiOx layer structure, Zr: SiOx/ porous SiOx structure outperforms from various aspects, including low operating voltages, tighter distributions of set voltage, higher stability of both low resistance state and high resistance state, and satisfactory endurance characteristics. Electric field simulation by COMSOL (TM) Multiphysics is applied, which corroborates that intensive electric field around the pore in porous SiOx layer guides the conduction of electrons. The constraint of conduction path leads to better stabilization and prominent performance of bilayer resistive switching devices. (C) 2013 AIP Publishing LLC.
Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer
(2013-12-11)
Chang, Kuan-
;
Huang, Jen-wei
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Chen, Kai-Huang
To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO2/porous SiO2 thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO2/porous SiO2 RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model.
The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory
(2013-05-20)
Huang, Jen-Wei
;
Zhang, Rui
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Chang, Kuan-Chang
This letter investigated the electrical characteristics of resistance random access memory (RRAM) with HfO2/BN bilayer structures. By adopting the high/low permittivity structure, we obtained the excellent device characteristics such as uniform distribution of switching voltage and more stable resistance switching properties of RRAM. The current conduction mechanism of low resistance state in the HfO2/BN device was transferred to space-charge-limited current conduction from Ohmic conduction owing to space electric effect concentrated by the high/low permittivity bilayer structures. The electric field in the bilayer can be verified by COMSOL simulation software. (C) 2013 AIP Publishing LLC.