Browsing by Author "Peng, JH"

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ESD test methods on integrated circuits: An overview
(2001)
Ker, MD
;
Peng, JH
;
Jiang, HC
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電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
ESD phenomenon has become a serious problem for IC products fabricated by deep-submicron CMOS technologies. To qualify the ESD immunity of IC products, there are some test methods and standards developed by some organizations, which are ESDA, AEC, EIA/JEDEC, and MIL-STD organizations. ESD events have been classified into 4 models, which are HBM, MM, CDM, and SDM. Besides, there are 4 modes of pin combinations for ESD zapping on the IC pins, which are specified as (1) Pin-to-VSS, (2) Pin-to-VDD, (3) Pin-to-Pin, and (4) VDD-to-VSS. All the test methods are designed to evaluate the ESD immunity of IC products. The zap number, zap interval, and sample size are all well defined in the related industrial standards. This paper provides an over-view among ESD test methods on IC products. In general, the commercial IC products are requested to sustain at least 2-kV HBM, 200-V MM, and 1-kV CDM ESD stresses.
Investigation on device characteristics of MOSFET transistor placed under bond pad for high-pin-count SOC applications
(2004-09-01)
Ker, MD
;
Peng, JH
;
電機學院
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College of Electrical and Computer Engineering
In the system-on-a-chip (SOC) era, chip layouts of integrated circuit (IC) products become more and more compact for cost reduction. To save layout area for SOC chips, on-chip electrostatic discharge (ESD) protection devices or input/output (I/O) transistors placed under bond pads is a good choice. To ensure that this choice is practicable, a test chip with large size NMOS devices placed under bond pads had been fabricated in a 0.35-mum 1P4M 3.3-V CMOS process for verification. The bond pads of this test chip had been drawn with different layout patterns on the interlayer metals for two purposes. One is to investigate the efficiency against bonding stress applied on the active devices under the bond pads. The other purpose is to reduce the parasitic capacitance of bond pads for high-speed or high-frequency circuit applications. DC characteristics of these devices placed under bond pads had been measured under three conditions: before wire bonding, after wire bonding, and after thermal reliability stresses. After assembled with wire bond package and thermal reliability stresses, the measured results show that there are only little variations between devices under bond pads and devices beside bond pads. This result can be applied to save layout area of IC products by realizing on-chip ESD protection devices or I/O transistors under the bond pads, especially for the high-pin-count SOC.
Novel ESD implantation for sub-quarter-micron CMOS technology with enhanced machine-model ESD robustness
(2002)
Ker, MD
;
Hsu, HC
;
Peng, JH
;
電機學院
;
College of Electrical and Computer Engineering
A novel ESD implantation method is proposed to significantly improve machine-model (MM) electrostatic discharge (ESD) robustness of CMOS integrated circuits in sub-quarter-micron CMOS processes. By using this method, the ESD current is discharged far away from the surface channel of NMOS, therefore the NMOS can sustain a much higher ESD level, especially under the machine-model ESD stress. The MM ESD robustness of the gate-grounded NMOS (ggNMOS) with a device dimension of W/L = 300mum/0.5mum has been successfully improved from the original 450V to become 675V in a 0.25-mum CMOS process.