Browsing by Author "Peng, P. C."
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Item type:Item, 40 GHz Phase Shifter based on Semiconductor Laser(2008-04-10) ;Peng, P. C. ;Wu, F. M. ;Lin, C. T. ;Chen, J. H.Kao, W. C.This investigation experimentally demonstrates a 40 GHz phase shifter based on a semiconductor laser. The phase shift is achieved by adjusting the bias current and wavelength detuning. The device has an optical delay of 23 ps and a phase shift of about 331 degrees.Item type:Item, Demonstration of slow light via population oscillation in quantum dot VCSEL(2007) ;Xuan, R. ;Chi, J. Y. ;Peng, P. C. ;Yang, H. P.Chao, C. L.Experimental data for slow light delay in a quantum dot VCSEL are analyzed with a Fabry-Perot analysis. The analysis can fit the observed wavelength dependence of the delay. It can also explain that the maximum delay occur at a wavelength detuned from the resonant frequency.Item type:Item, Electrically Controlled Phase Shifter using Semiconductor Laser in Optical Single Sideband System(2009) ;Wu, F. M. ;Peng, P. C. ;Yeh, S. K. ;Lin, C. T.Chen, J. H.This investigation experimentally explores a microwave phase shifter using a semiconductor laser in an optical single sidebancl system. The operational bandwidth from 12 to 20 GHz is achieved by adjusting the bias current.Item type:Item, Fast and slow light property improvement in erbium-doped amplifier(2013-01-01) ;Peng, P. C. ;Wu, F. K. ;Kao, W. C. ;Chen, J.Lin, C. T.This work experimentally demonstrates improvement of the fast light property in erbium-doped amplifiers at room temperature. The difference between the signal power and the pump power associated with bending loss is used to control the signal power at the different positions of the erbium-doped fiber (EDF) to improve the fast light property. Periodic bending of the EDF increases the time advance of the probe signal by over 288%. Additionally, this concept also could improve the fast light property using coherent population oscillations in semiconductor optical amplifiers.Item type:Item, Modeling of slow light in vertical cavity surface emission lasers(2007) ;Chou, C. -S. ;Lee, R. -K. ;Peng, P. C. ;Kuo, H. C.Lin, G.We develop a model for the slow light in the Vertical Cavity Surface Emission Lasers (VCSELs), with the combinations of cavity and the population pulsation effects. The dependences of pumping power, injection current and wavelength detuning for the group delays are demonstrated theoretically and experimentally. Up to 65 ps group delays and up to 10 GHz modulation frequency can be achieved in the room temperature at the wavelength of 1.3 mu m. Based on the experimental parameters of quantum dot VCSEL structures, we show that the resonance effect of laser cavity plays a significant role to enhance the group delays.Item type:Item, Optical Vector Signal Generation Using Double Sideband with Carrier Suppression and Frequency Multiplication(2008) ;Lin, C. T. ;Jiang, W. J. ;Wong, E. Z. ;Chen, J.Shih, P. T.This work experimentally demonstrates optical vector signal generation using frequency multiplication based on double sideband with carrier suppression. After transmission over 50-km SMF, the power penalty of 15-GHz 1.25-Gb/s RF signals is less than 0.2-dB. (C)2008 Optical Society of AmericaItem type:Item, Polarization Switching in 1.3-mu m Quantum Dot Vertical Cavity Surface Emitting Lasers(2009) ;Wu, F. M. ;Lan, R. L. ;Peng, P. C. ;Huang, C. C.Peng, R. Y.This work for the first time, experimentally demonstrates the polarization switching in 1.3 mu m quantum dot VCSEL. The polarization switching in quantum dot VCSEL is achieved by adjusting the optical injection power. (C)2009 Optical Society of AmericaItem type:Item, SOA-based fiber ring laser use in a photonic radio-frequency phase shifter(2011-03-01) ;Wu, F. M. ;Peng, P. C. ;Chen, J. ;Lin, C. T.Kao, W. C.This investigation demonstrates the feasibility of a semiconductor optical amplifier (SOA)-based fiber ring laser use in a photonic radio-frequency (RF) phase shifter. Experimental results indicate that a fiber ring laser can successfully replace an external pump laser in a photonic RF phase shifter. The RF phase shifter can be turned by adjusting the power of the fiber ring laser.Item type:Item, Tunable erbium-doped fiber ring laser with signal-averaging function for fiber-optic sensing applications(2011-01-01) ;Kuo, S. T. ;Peng, P. C. ;Kao, M. S. ;Lu, H. H.Chen, J. F.This work proposes a novel erbium-doped fiber ring laser as a sensing control center (CC) for long-haul fiber Bragg grating (FBG) sensor systems. The tunable erbium-doped fiber laser with signal averaging functionality not only provides intense and stable laser light, but also suppresses the effect of noise on the system performance. A sample 30/60 km FBG sensor array is connected to the fiber ring laser to demonstrate experimentally the feasibility and effectiveness of the laser as a CC. The experimental results indicate that the signal averaging operation inside the proposed setup increases the system signal-to-noise ratio (SNR).Item type:Item, Tunable optical group delay in quantum dot vertical-cavity surface-emitting laser at 10 GHz(2006-08-31) ;Peng, P. C. ;Lin, C. T. ;Kuo, H. C. ;Lin, G.Tsai, W. K.This investigation experimentally demonstrates tunable optical group delay in a 1.3 mu m quantum dot vertical-cavity surface-emitting laser (QD VCSEL). The QD VCSEL is fabricated on a GaAs substrate. Tunable delays are achieved by varying the bias currents, and the maximum delay of 42 ps at 10 GHz has been demonstrated at room temperature.Item type:Item, Tunable slow light device using quantum dot semiconductor laser(2006-12-25) ;Peng, P. C. ;Lin, C. T. ;Kuo, H. C. ;Tsai, W. K.Liu, J. N.This investigation experimentally demonstrates a tunable slow light device using a quantum dot (QD) semiconductor laser. The QD semiconductor laser at 1.3 mu m fabricated on a GaAs substrate is grown by molecular beam epitaxy. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning. The slow light device operated under probe signal from 5 to 10 GHz is presented. Moreover, we also demonstrate that the tunable slow light device can be used in a subcarrier multiplexed system. (C) 2006 Optical Society of America.Item type:Item, Tunable Slow Light in Quantum Well Vertical-Cavity Surface-Emitting Laser at 40 GHz(2008) ;Peng, P. C. ;Wu, F. M. ;Lin, C. T. ;Chen, J. H.Shih, P. T.This investigation experimentally demonstrates tunable slow fight in a quantum well vertical-cavity surface-emitting laser at 40 GHz. Tunable optical delays are achieved by adjusting the bias current and wavelength detuning. (C) 2008 Optical Society of AmericaItem type:Item, Wavelength switching based on quantum-dot vertical-cavity surface-emitting laser(2012-09-01) ;Peng, P. C. ;Wang, H. Y. ;Lan, R. L. ;Lu, H. H.Lin, G. R.This study investigates, for the first time, static and dynamic wavelength switching characteristics of the 1.3 mu m quantum-dot vertical-cavity surface-emitting laser (QD VCSEL). The free-running QD VCSEL with lambda 1 and lambda 2 state innately is injected by a laser source with lambda 1 state. When the injection power exceeds the threshold power, the dominant state of the QD VCSEL changes from lambda 2 to lambda 1 state. Results of this study demonstrate that the wavelength switching based on a 1.3 mu m QD VCSEL has a simpler and more cost-effective configuration than those of previous systems.