Browsing by Author "Peng, Wen Yang"

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Electron beam lithography on cylindrical roller
(2010-05-01)
Tseng, Shih Chun
;
Peng, Wen Yang
;
Hsieh, Yi Fan
;
Lee, Ping Jen
;
Lai, Wen Lang
We developed a nano-structure fabrication technology over a cylindrical roller using electron beam lithography (EBL) and a specimen rotation apparatus. The high-resolution patterning is done on a cylindrical roller specimen and it is achieved by controlling the thickness of photo-resistance (PR) and dosage of the electron beam (EB). We successfully obtained homogeneous arrays of one-third circle grating with a nano-scale width 100 nm and a large area of 6 x 3.5 mm square. Couples of the "ITRI" character marks were also fabricated. The stitching control was accurately derived using the in-house made two-axis rotation system, which provides the smallest stitching of about 1.6 mu m. The minimum feature size of 100 nm over the cylindrical roller is demonstrated. Moreover, the Nicole template with "ITRI" character pattern on the cylindrical roller was also successfully made, of which thickness is about 80 nm. (C) 2009 Elsevier B.V. All rights reserved.
Properties of gated single free-standing carbon nanotube with multiple growth sequence
(2007-10-01)
Tseng, Shih Chun
;
Tsai, Ching Hsiang
;
Li, Chia-Hung
;
Peng, Wen Yang
;
Chen, Shih-Pu
In this paper, we discuss an approach to fabricating a carbon nanotubes (CNTs) gate electrode structure for cold cathode emitter applications. The field emission behavior of the structure was studied by using single vertically aligned free-standing CNTs of various lengths and gate electrodes of various sizes to determine the optimal emission structure. A single CNT electrode source with a gate electrode was fabricated by combining optical lithography, electron-beam lithography (EBL), and inductively coupled plasma chemical vapor deposition (ICP-CVD). A single mask was adopted to define the gated structure and nano sized catalyst for CNT growth. A vertically aligned CNT was then grown within the gate hole by ICP-CVD. The CNT height inside the gate could be lengthened by multiple growth processes without affecting the field emission capability. The best turn-on fields, defined as the field required to generate an emission current of 1 nA, were approximately 1.66 and 1.38 V/mu m, respectively. The turn-on field emission current saturated when the CNT length was about the same as the gate height.