Browsing by Author "Peng, Wu-Chin"

Now showing 1 - 4 of 4

A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness
(2007)
Wu, Woei-Cherng
;
Chao, Tien-Sheng
;
Peng, Wu-Chin
;
Yang, Wen-Luh
;
Wang, Jer-Chyi
High-performance wrapped-select-gate (WSG) SONOS (silicon-oxide-nitride-silicon) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism with different ONO thickness in WSG-SONOS memory was well investigated. The different programming efficiency of the WSG-SONOS memory with different ONO thickness can be explained by the lateral electrical field extracted from the simulation. Furthermore, multi-level storage is easily obtained and well V-th distribution is also presented. High program/erase speed (10us/5ms) and low programming current (3.5uA) are performed to achieve the multi-level operation with excellent gate and drain disturbance, second-bit effect, data retention and endurance.
Highly reliable multilevel and 2-bit/cell operation of wrapped select gate (WSG) SONOS memory
(2007-03-01)
Wu, Woei-Cherng
;
Chao, Tien-Sheng
;
Peng, Wu-Chin
;
Yang, Wen-Luh
;
Wang, Jer-Chyi
In this letter, high-performance and reliable wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS) memory cells with multilevel and 2-bit/cell operation have been successfully demonstrated. The multilevel storage is easily obtained with fast program/erase speed (10 mu s/5 ms) and low programming current (3.5 mu A) for our WSG SONOS by a source-side injection. Besides the excellent reliability properties of our multilevel WSG-SONOS memory including unconsidered gate and drain disturbance, long charge retention (> 150 degrees C) and good endurance (> 10(4)) are also presented. This novel WSG-SONOS memory with a multilevel and 2-bit/cell operation can be used in future high-density and high-performance memory application.
Improving electrical characteristics of high-k NiTiO dielectric with nitrogen ion implantation.
(2006-09-01)
Yang, Wen-Luh
;
Chao, Tien-Sheng
;
Chen, Shine-China
;
Yang, Chin-Hao
;
Peng, Wu-Chin
A new high-dielectric-constant (k) NiTiO dielectric film with a low temperature has been investigated for the first time. The k of the NiTiO film was estimated to be larger than 40. The roughness of the NiTiO dielectric film to nitrogen ion implantation (I/I) was uniform, thus causing a low leakage current (< 10(-9) A) and a high breakdown voltage (> 25 MV/cm(2)). These results are superior to those reported in the literature, suggesting a potential use of the NiTiO film as dielectric for future RF/mixed IC applications.
Optimized ONO thickness for multi-level and 2-bit/cell operation for wrapped-select-gate (WSG) SONOS memory
(2008-01-01)
Wu, Woei-Cherng
;
Chao, Tien-Sheng
;
Peng, Wu-Chin
;
Yang, Wen-Luh
;
Chen, Jian-Hao
In this paper, highly reliable wrapped-select-gate (WSG) silicon-oxide-nitride-oxide-silicon (SONOS) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism for WSG-SONOS memory with different ONO thickness was thoroughly investigated. The different programming efficiencies of the WSG-SONOS memory under different ONO thicknesses are explained by the lateral electrical field extracted from the simulation results. Furthermore, multi-level storage is easily obtained, and good V(TH) distribution presented, for the WSG-SONOS memory with optimized ONO thickness. High program/erase speed (10 mu s/5 ms) and low programming current (3.5 mu A) are used to achieve the multi-level operation with tolerable gate and drain disturbance, negligible second-bit effect, excellent data retention and good endurance performance.