Browsing by Author "Peng, YC"

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An optically pumped blue GaN-based vertical-cavity surface emitting laser employing AIN/GaN and Ta2O5/NO2 distributed bragg reflectors
(2005)
Kao, CC
;
Yao, HH
;
Peng, YC
;
Lu, TC
;
Kuo, HC
The laser action of GaN-based VCSEL with 3-lambda cavity and hybrid DBR mirrors, consisting of AlN/GaN and Ta2O5/SiO2 DBR was achieved under the optical pumping at room temperature. The laser emits 448nm blue wavelength with a linewidth of 0.25nm above threshold.
Fabrication and characteristics of GaN-based microcavity light-emitting diodes with high reflectivity AIN/GaN distributed Bragg reflectors
(2006-04-01)
Peng, YC
;
Kao, CC
;
Huang, HW
;
Chu, JT
;
Lu, TC
In this paper, we report a GaN-based microcavity light-emitting diode (MCLED) which is composed of 25 pairs of high-reflectivity GaN/AlN distributed Bragg reflector (DBR) and 6 pairs of ex-situ deposited SiO2/TiO2 dielectric mirrors. The electroluminescence peak of this structure matched well with the high reflectance area of the top and bottom DBRs, and shows a narrow emission of approximately 6.7 nm. The fabricated device also shows a more excellent performance on the stability of the emission peak wavelength while varying injection current density and operating temperature than a regular LED.
Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector
(2005-08-22)
Kao, CC
;
Peng, YC
;
Yao, HH
;
Tsai, JY
;
Chang, YH
GaN-based vertical-cavity surface emitting laser with 3 lambda cavity and hybrid mirrors, consisting of the 25 pairs AlN/GaN dielectric Bragg reflector and the 8 pairs Ta2O5/SiO2, was fabricated. The laser action was achieved under the optical pumping at room temperature with a threshold pumping energy density of about 53 mJ/cm(2). The laser emits 448 nm blue wavelength with a linewidth of 0.25 nm and the laser beam has a degree of polarization of about 84%. (c) 2005 American Institute of Physics.
Fabrication of low-temperature poly-Si thin film transistors with self-aligned graded lightly doped drain structure
(2002-01-01)
Cheng, HC
;
Lin, CW
;
Cheng, LJ
;
Tseng, CH
;
Chang, TK
A novel approach for fabricating low-temperature poly-Si (LTPS) thin film transistors (TFTs) with self-aligned graded lightly doped drain (LDD) structure was demonstrated. The self-aligned graded LDD structure was formed by side-etching the Al gate under the photoresist followed by excimer laser irradiation for dopant activation and lateral diffusion. The graded LDD poly-Si TFTs exhibited low-leakage-current characteristics without significantly sacrificing driving capability due to the graded dopant distribution in the LDD regions, in which the drain electric field could be reduced. The leakage current of 1 mum graded LDD UPS TFTs at Vds = 5 V and Vgs = -10 V could reach below 1 pA/mum, and the on/off current ratio at Vds = 5 V exceeded 10(7). (C) 2001 The Electrochemical Society.
InGaN-based light-emitting diode with undercut side wall
(2004)
Kao, CC
;
Chu, JT
;
Huang, HW
;
Peng, YC
;
Yu, CC
Internet and e-commerce adoption by the Taiwan semiconductor industry
(2005)
Peng, YC
;
Trappey, CV
;
Liu, NY
;
管理科學系
;
Department of Management Science
Purpose - To determine the status of internet and e-commerce adoption by the Taiwan semiconductor industry, the research is designed to help government and enterprise in formulating strategic plans and making resource allocation decisions. Design/methodology/approach - Using the three-level model of internet commerce adoption (MICA), a survey of 287 companies and web sites was designed. Semiconductor firms were placed into five categories: integrated circuit (IC) design, manufacturing, packaging, IC testing, and peripheral device manufacturing. Findings - The MICA model shows the internet adoption ratio for semiconductor firms as 82.6 percent, significantly higher than the electronics and electrical machinery industry sector (56.5 percent). The IC manufacturing and packaging segment are in the processing stage, the final stage of development for the MICA model. One-third of the IC testing industry segment falls into the provision stage, and 36.1 percent web sites are in the processing stage. The IC design and peripherals industrial segments are located in the provision stage. Practical implications - The IC manufacturing segment is conducting more financial transactions than the other segments - a result that matches earlier research showing that larger companies are most likely to implement e-business applications. Many enterprises in the industry are lagging with the adoption of the internet indicating a need for education and training. Originality/value - This benchmark study provides a framework for evaluating the internet adoption status of semiconductor and other high technology firms. The MICA model is demonstrated to be suitable for evaluating the different stages of internet adoption.
Light-output enhancement in a nitride-based light-emitting diode with 22 degrees undercut sidewalls
(2005-01-01)
Kao, CC
;
Kuo, HC
;
Huang, HW
;
Chu, JT
;
Peng, YC
We successfully fabricated nitride-based light-emitting diodes (LEDs) with similar to 22degrees undercut sidewalls. The similar to 22degrees etching undercut sidewalls were achieved by controllable inductively coupled plasma reactive ion etching. With a 20-mA current injection, the output powers of the LED with similar to 22degrees undercut sidewalls and standard LED were 5.1 and 3 mW, respectively-a factor of 1.7 times enhancement. It was found that such undercut sidewalls could enhance the probability of escaping the photons outside from the LED in the near horizontal and in-plane directions. This simple and controllable method is beneficial to fabricate brighter LEDs.
Multipass stereo matching algorithm using high-curvature points on image profiles
(1999)
Peng, YC
;
Wang, SJ
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電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this paper, we propose a new algorithm to do correspondence for stereo images. This algorithm applies two passes of feature-based matching to establish a coarse disparity map first. Then, by carefully matching the intensity information, a dense disparity map is generated. In this algorithm, instead of the commonly used "edge" points, the high-curvature points of image profiles are chosen as the feature points to be matched. These high-curvature points can be easily extracted from the images by checking the 2(nd) derivatives of the intensity profiles. These high-curvature features can faithfully catch the major characteristics of the profile shape and can thus avoid some ambiguities in feature matching. A dissimilarity measure, which is closely related to the profile shape, is thus defined using these feature points. To reduce the ambiguity in local matching, the dynamic programming technique is used to achieve a global optimal correspondence. After the feature matchings, an intensity-based approach is used to establish a dense disparity map. Both the sum-of-squared-difference method (SSD) and the dynamic programming method are used. By carefully checking the consistence between intensity continuity and disparity continuity, a fairly accurate disparity map can be efficiently generated even if the images are short of texture.
Reverse CoSi(2) thermal stability and digitized sheet resistance increase of sub-90 nm polysilicon lines
(2005-04-01)
Lo, CY
;
Peng, YC
;
Chen, YM
;
Tu, GC
;
Lin, SS
An equation for quantifying the CoSi(2) thermal stability of polysilicon lines ranging from 50 nm to 2 mu m is proposed for the first time. In contrast to the intuitive thinking of narrower lines having a worse thermal stability, the equation predicts the weakest thermal stability occurring at the super nominal line in 90nm technology. An interesting phenomenon of digitized resistance increase is also reported for the first time.
The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors
(2006-03-01)
Kao, CC
;
Lu, TC
;
Huang, HW
;
Chu, JT
;
Peng, YC
The characteristics of a GaN-based vertical-cavity surface-emitting laser (VCSEL) with 25 pairs AIN-GaN distributed Bragg reflector (DBR) and eight pairs Ta2O5-SiO2 DBR was investigated and analyzed under the optical pumping at room temperature. The GaN-based VCSEL emits a blue wavelength at 448 nm with a linewidth of 0.17 nm with a near-field emission spot diameter of about 3 mu m. The laser beam has a near linear polarization with a degree of polarization of about 84%. The laser shows a high spontaneous emission coupling efficiency of about 5 x 10(-2) and a high characteristic temperature of about 244 K.