Browsing by Author "Peng, Yu-Chun"

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GaN-based high-Q vertical-cavity light-emitting diodes
(2007-10-01)
Lu, Tien-Chang
;
Kao, Tsung-Ting
;
Kao, Chih-Chiang
;
Chu, Jung-Tang
;
Yeh, Kang-Fan
We report a fabrication and demonstration of a GaN-based high-Q vertical-cavity light-emitting diode (VCLED). The GaN VCLED is composed of a 25-pair high-reflectivity (98%) GaN/AlN distributed Bragg reflector (DBR), an eight-pair SiO2/Ta2O5 dielectric DBR (99%), and a three-A optical thickness InGaN/GaN active region. It shows a very narrow linewidth of 0.52 nm, corresponding to a cavity Q-value of 895 at a driving current of 10 mA and a dominant emission peak wavelength at 465.3 nm. In addition, this VCLED emission linewidth continues to decrease with an increasing injection current, suggesting a possible realization of GaN-based vertical-cavity surface emitting lasers.