Browsing by Author "Perng, TH"

Now showing 1 - 7 of 7

Effects of H-2 plasma treatment on low dielectric constant methylsilsesquioxane
(1999-09-01)
Chang, TC
;
Liu, PT
;
Mei, YJ
;
Mor, YS
;
Perng, TH
The quality of organic low-k methylsilsesquioxane (MSQ) film is degraded by the damage of oxygen plasma and hygroscopic behavior during photoresist stripping. In addition, the interaction between MSQ and copper is worth investigating. In this work, we have studied the H-2 plasma treatment to improve the quality and enhance the copper penetration resistance of MSQ, Experimental results show the leakage current of MSQ decreases as the H-2 plasma treatment time is increased. The dielectric constant of treated samples also remains constant (similar to 2.7). In addition, the copper diffusion resistance of MSQ film is significantly promoted. The H-2 plasma treatment can provide additional hydrogen to passivate the inner structure of porous MSQ film as well as reduce the probability of moisture uptake and interaction with Cu atoms. Therefore, the low-k dielectric properties of MSQ are significantly enhanced by H-2 plasma treatment. (C) 1999 American Vacuum Society. [S0734-211X(99)05105-7].
Electrical characteristics of thin HfO(2) gate dielectrics prepared using different pre-deposition surface treatments
(2005-01-01)
Chen, CW
;
Chien, CH
;
Perng, TH
;
Yang, MJ
;
Liang, JS
We have investigated the effects that various pre-deposition surface treatments, such as HF dipping (HF-dipped), NH(3) surface nitridation (NH(3)-annealed), and rapid thermal oxidation (RTO-treated), have on the electrical properties of HfO(2) gate dielectrics. The NH(3)-annealed technique is superior to the others because the dielectric subject to NH(3) surface nitridation possesses a tremendously reduced leakage current, the lowest equivalent oxide thickness (EOT),and a moderate, hysteresis width. In contrast, the RTO-treated preparation can only effectively reduce the leakage current by its resultant increased physical thickness and displays considerably severe hysteresis. We have also studied the dependence of hysteresis on the initial inversion bias (V(inv)), temperature, and frequency for-all splits. The hysteresis width increases upon increasing the initial inversion bias and decreasing the temperature, but it is rather insensitive to the measuring frequency. In addition, our experimental results indicate that the hysteresis width depends exponentially on both the initial inversion bias and the temperature, and it can be described well by a general empirical relationship that has the form C(T) (.) exp(R(v)V(inv),). Finally, the conduction currents through the dielectrics are probably dominated by trap-assisted tunneling (TAT) because the current densities display stronger temperature dependence at low voltage than they do at higher voltages. Based on the trap-assisted tunneling model, the corresponding parameters have been extracted and are presented.
Electrical characteristics of thin HfO2 gate dielectrics prepared using different pre-deposition surface treatments
(2005-01-01)
Chen, CW
;
Chien, CH
;
Perng, TH
;
Yang, MJ
;
Liang, JS
We have investigated the effects that various pre-deposition surface treatments, such as HF dipping (HF-dipped), NH3 surface nitridation (NH3-annealed), and rapid thermal oxidation (RTO-treated), have on the electrical properties of HfO2 gate dielectrics. The NH3-annealed technique is superior to the others because the dielectric subject to NH3 surface nitridation possesses a tremendously reduced leakage current, the lowest equivalent oxide thickness (EOT),and a moderate, hysteresis width. In contrast, the RTO-treated preparation can only effectively reduce the leakage current by its resultant increased physical thickness and displays considerably severe hysteresis. We have also studied the dependence of hysteresis on the initial inversion bias (V-inv), temperature, and frequency for-all splits. The hysteresis width increases upon increasing the initial inversion bias and decreasing the temperature, but it is rather insensitive to the measuring frequency. In addition, our experimental results indicate that the hysteresis width depends exponentially on both the initial inversion bias and the temperature, and it can be described well by a general empirical relationship that has the form C(T) (.) exp(RvVinv,). Finally, the conduction currents through the dielectrics are probably dominated by trap-assisted tunneling (TAT) because the current densities display stronger temperature dependence at low voltage than they do at higher voltages. Based on the trap-assisted tunneling model, the corresponding parameters have been extracted and are presented.
Enhanced negative substrate bias degradation in nMOSFETs with ultrathin plasma nitrided oxide
(2003-05-01)
Perng, TH
;
Chien, CH
;
Chen, CW
;
Lin, HC
;
Chang, CY
The degradation induced by substrate hot electron (SHE) injection in 0.13-mum nMOSFETs with ultrathin (similar to2.0 - nm) plasma nitrided gate dielectric was studied. Compared to the conventional thermal oxide, the ultrathin nitrided gate dielectric is found to be more vulnerable to SHE stress, resulting in enhanced threshold voltage (V-t) shift and transconductance (G(m)) reduction. The severity of the enhanced degradation increases with increasing nitrogen content in gate dielectric with prolonged nitridation time. While the SHE-induced degradation is found to be strongly related to the injected electron energy for both conventional oxide [1], [2]and plasma-nitrided oxide, dramatic degradation in threshold voltage shift for nitrided oxide is found to occur at a lower substrate bias magnitude (- - 1 V), compared to thermal oxide (similar to -1.5 V). This enhanced degradation by negative substrate bias in nMOSFETs with plasma-nitrided gate dielectric is attributed to a higher concentration of paramagnetic electron trap precursors introduced during plasma nitridation [3].
HfO2 MIS capacitor with copper gate electrode
(2004-12-01)
Perng, TH
;
Chien, CH
;
Chen, CW
;
Yang, MJ
;
Lehnen, P
Metal-insulator-semiconductor capacitors were fabricated using atomic vapor deposition HfO2 dielectric with sputtered copper (Cu) and aluminum (Al) gate electrodes. The counterparts with SiO2 dielectric were also fabricated for comparison. Bias-temperature stress and charge-to-breakdown (QBD) test were conducted to examine the stability and reliability of these capacitors. In contrast with the high Cu drift rate in an SiO2 dielectric, Cu in contact with HfO2 seems to be very stable. The HfO2 capacitors with a Cu-gate also depict higher capacitance without showing any reliability degradation, compared to the Al-gate counterparts. These results indicate that HfO2 with its considerably high density of 9.68 g/cm(3) is acting as a good barrier to Cu diffusion, and it thus appears feasible to integrate Cu metal with the post-gate-dielectric ultralarge-scale integration manufacturing processes.
High-density MIM capacitors with HfO(2) dielectrics
(2004-12-22)
Perng, TH
;
Chien, CH
;
Chen, CW
;
Lehnen, P
;
Chang, CY
Metal-insulator-metal (MIM) capacitors with high-k HfO(2) dielectrics were fabricated and investigated. Experimental results show low leakage current densities of similar to5 x 10(-9) A/cm(2) and high capacitance density of similar to3.4 fF/mum(2) at 100 kHz in the MIM capacitors. The temperature coefficient and frequency dispersion effect for these MIM capacitors were very small. Different metal electrodes like tantalum, aluminum and copper were also investigated and compared. Finally, the mechanism of electrical transport was extracted for the HfO(2) MIM capacitors to be Poole-Frenkel-type conduction mechanism. (C) 2004 Elsevier B.V. All rights reserved.
Hot-electron-induced electron trapping in 0.13 mu m nMOSFETs with ultrathin (EOT=1.6 nm) nitrided gate oxide
(2005)
Chen, CW
;
Chien, CH
;
Perng, TH
;
Chang, CY
;
電子工程學系及電子研究所
The device degradation caused by the hot-electron-induced electron trapping in the ultrathin (equivalent oxide thickness = 1.6 nm) nitrided gate oxide for the 0.13 mu m n-metal oxide semiconductor field effect transistors (n-MOSFETs) has been investigated. We have found that the nitrogen, incorporated in the gate dielectrics by a variety of popular techniques including Si3N4/SiO2 (N/O) stack, NO annealing, and plasma nitridation, results in enhanced hot-electron-induced device degradations as compared to the conventional gate oxide counterpart. The enhanced hot-electron degradations are attributed to the electron trap generation in the ultrathin gate dielectric rather than the interface state generation as a result of nitrogen incorporation. (c) 2005 The Electrochemical Society.