Browsing by Author "Perng, YC"

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A novel two-step etching to suppress the charging damages during metal etching employing helicon wave plasma
(1998-06-01)
Cheng, HC
;
Lin, W
;
Kang, TK
;
Perng, YC
;
Dai, BT
A two-step etching has been performed to eliminate the plasma charging damages during helicon-wave plasma metal etching without selectivity loss, This technique utilized a normal etching recipe to remove the Al film and followed by an optimized etching recipe for the overetching step. By increasing the bias power and decreasing the source power, the optimum etching recipe can cause the plasma more directionally and reduce the Al charging damages. Eventually, the damage mechanism was also reported.
Charging damages to gate oxides in a helicon O-2 plasma
(1997-12-01)
Lin, W
;
Kang, TK
;
Perng, YC
;
Dai, BT
;
Cheng, HC
After the exposure of metal oxide semiconductor (MOS) capacitors with antenna structures to the helicon O-2 plasma, the leakage current. charge-to-breakdown (Q(bd)) and capacitance-voltage (C-V) curves have been characterized to realize the charging damages. The results indicate that the quasi static C-V(QSCV) distortion and Q(bd) depend on the exposure time rather than the antenna ratio. The QSCV and Q(bd) Show a two stage degradation as the exposure time increases. The leakage current increases slightly for the specimens exposed to the plasma for less than 120 s, and increases considerably for the ones with the exposure time of 300 s. Based on these results, the degradation mechanism of gate oxides under the helicon O-2 plasma is established.
Charging damages to gate oxides in a helicon O-2 plasma
(1997-12-01)
Lin, W
;
Kang, TK
;
Perng, YC
;
Dai, BT
;
Cheng, HC
After the exposure of metal oxide semiconductor (MOS) capacitors with antenna structures to the helicon O-2 plasma, the leakage current. charge-to-breakdown (Q(bd)) and capacitance-voltage (C-V) curves have been characterized to realize the charging damages. The results indicate that the quasi static C-V(QSCV) distortion and Q(bd) depend on the exposure time rather than the antenna ratio. The QSCV and Q(bd) Show a two stage degradation as the exposure time increases. The leakage current increases slightly for the specimens exposed to the plasma for less than 120 s, and increases considerably for the ones with the exposure time of 300 s. Based on these results, the degradation mechanism of gate oxides under the helicon O-2 plasma is established.
Effects of helicon-wave-plasma etching on the charging damage of aluminum interconnects
(1998-07-01)
Lin, W
;
Kang, TK
;
Perng, YC
;
Dai, BT
;
Cheng, HC
The etching parameters of aluminum in the helicon wave plasma are characterized to elucidate the mechanism of charging damage. By increasing the ion energy and decreasing the plasma density via increase of the bias power and decrease of the source power, respectively, we can significantly reduce charging damage, On the basis of this concept, we develop a two-step etching technique to suppress the charging damage without selectivity loss. Such a high-density plasma etching technique will be very suitable for the formation of high-density, and narrow-line interconnects.