Browsing by Author "Po-Tsun Liu"
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Item type:Item, DISPLAY PANEL(2017-10-26) ;Wei-Lien Sung ;Han-Lung Liu ;Wen-Chuan Wang ;Shao-Lun ChangShih-Chieh LinA display panel includes a substrate, and a pixel array and a gate driving circuit. The gate driving circuit provides gate driving signals to the pixel array, and includes shift registers, wherein each shift register includes a voltage providing unit, a first driving transistor, a voltage transmitting unit and a second driving transistor. The voltage providing unit receives a setting signal and a system high voltage to provide a first terminal voltage. The first driving transistor receives a first clock signal and the first terminal voltage to provide a first gate driving signal. The voltage transmitting unit receives the first gate driving signal to provide a second terminal voltage. The second driving transistor receives a second clock signal and the second terminal voltage to provide a second gate driving signal. Therefore, the influence caused by large difference of driving capabilities of the first and the second driving transistor is avoided.Item type:Item, GATE DRIVING CIRCUIT(2018-03-01) ;Wei-Lien Sung ;Han-Lung Liu ;Wen-Chuan Wang ;Chi-Liang KuoYuan-Hao ChangA gate driving circuit is provided. The gate driving circuit includes multistage driving modules, where an Nth stage driving module includes a setting circuit, a first driving circuit, an isolating switch circuit, a second driving circuit and an anti-noise circuit. The setting circuit generates a first precharge signal according to a gate driving signal of an (N−2)th scan line or a start signal. The isolating switch circuit coupled between the first driving circuit and the second driving circuit provides a second precharge signal, so as to effectively avoid a flickering problem of a display image caused by a surge of the gate driving signal due to a coupling effect of a parasitic capacitance of the transistor and a bootstrap capacitor, and meanwhile the bootstrap capacitor is not used, so as to effectively reduce a bezel area.Item type:Item, 全固態離子型薄膜元件開發(2013) ;劉柏村 ;Po-Tsun Liu國立交通大學光電工程研究所本計畫主要目標是發展具有奈米抗反射層(Anti-reflective coating; ARC)結構的銅銦鎵硒(Cu(In,Ga)Se2; CIGS)薄膜太陽能電池技術。利用奈米結構的抗反射層來增加光捕獲效果(Light trapping),以提昇CIGS 太陽能電池的光電轉化效率。在此計劃中,我們不使用任何催化劑或模板來輔助薄膜成長,即可利用簡易的水熱法來合成柱狀與花瓣狀的氧化鋅奈米結構層。藉由藥品溶液的濃度、試劑的化學計量、溫度與酸鹼度(PH)的優化,我們可以控制奈米結構的尺寸和幾何形狀。最後,將氧化鋅奈米陣列應用於無硒化銅銦鎵硒薄膜太陽能電池元件的製作,以達成全波段低反射效果與提昇太陽能電池元件光電轉換效率。在整個研究的過程中,我們也嘗試將無硒化銅銦鎵硒薄膜應用在可撓式不鏽鋼基板上,作為可撓式(R2R) CIGS 薄膜太陽電池的塑膠基板材料,朝向可撓性、大面積、低耗能、低成本及環保製程為目標。Item type:Item, 電漿薄膜製程技術應用於綠色節能材料特性提昇之研究(2011) ;劉柏村 ;Po-Tsun Liu國立交通大學光電工程研究所本計畫目標是要開發符合環保並且具經濟效益的銅銦鎵硒(CIGS)薄膜太陽能電池製程技術。擬開發無毒性的硒化製程以取代使用劇毒硒化氫蒸氣的傳統製程,並開發不含鎘溶液的化學法來製作緩衝層,以免除毒性廢液的疑慮。 本計畫共分為兩階段進行探討。第一階段是以CIGS硒化系統進行硒化製程,研究中將改變硒化溫度以及硒化時間,探討此兩種變因的改變對CIGS薄膜吸收層微結構與光電特性的影響。第二階段則是以化學水浴沉積法成長硫化鋅薄膜,在此製程參數設計方面,主要藉由改變氨水濃度與沉積時間來確定出其製程的最佳條件,並利用場發射掃描式電子顯微鏡、X光繞射儀與紫外光/可見光光譜儀等對硫化鋅膜層進行成分與穿透率分析。CIGS 元件的製備將以濺鍍沉積搭配無毒性的硒化法,並配合即時多階段溫度熱處理技術進行CIGS吸收層退火結晶製程。同時將利用既有的奈米氧化物製備與靶材製作技術,開發符合薄膜太陽能電池所用的透明導電氧化物薄膜,以能提高太陽能電池的光電轉換效率。