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Browsing by Author "Qiu, Jian-Tai"

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    A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications
    (2012-04-01)
    Chen, Min-Cheng
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    Chen, Hao-Yu
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    Lin, Chia-Yi
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    Chien, Chao-Hsin
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    Hsieh, Tsung-Fan
    This paper reports a versatile nano-sensor technology using "top-down" poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady Vth adjustment window (>2 V Programming/Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording.
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    Estimating the Detection Stability of a Si Nanowire Sensor Using an Additional Charging Electrode
    (2013)
    Chen, Min-Cheng
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    Chen, Hsiao-Chien
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    Lee, Ta-Hsien
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    Lin, Yu-Hsien
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    Shih, Jyun-Hung
    This paper proposes a sensing stability estimation method that involves using an additional forcing electrode to simulate the surface charge coupling effect for bottom gate nanowire sensors. The alteration of the Si nanowire can be observed by using the charging electrode without any complex surface treatment and micro-channel setup. The nanowire sensor has a distinct charge-sensitive slope (V-th shift > 60 mV/10(-16)C) with a wire-width scaling of 35 nm. The proposed estimation technique simplifies the charge sensing operation.